In the fabrication process of nanoelectronic device arrays based on single-wall carbon nanotube (SWCNT), oriented alignment of SWCNTs and property modification of metallic SWCNTs in the array are the key problems to b...In the fabrication process of nanoelectronic device arrays based on single-wall carbon nanotube (SWCNT), oriented alignment of SWCNTs and property modification of metallic SWCNTs in the array are the key problems to be solved. Pulse gas alignment with substrate downward tilt is proposed to realize the controllable alignment of SWCNTs. Experimental results demonstrate that 84% SWCNTs are aligned in -15°―15° angular to the pulse gas direction. A modified nanomanipulation technology based on atomic force microscope (AFM) is utilized to perform various kinds of SWCNT manipulation, such as SWCNT separation from the "Y" CNT, catalyst removal from the SWCNT end, continual nano buckles fabrication on SWCNT and even stretching to break, which provides a feasible way to modify the size, shape and the electrical property of SWCNTs.展开更多
基金the National High Technology Research and Development Program (863 Program No. 2006AA04Z320)Excellent Young Scholars Training Grant of Liaoning Province (Grant No. 2005220025)
文摘In the fabrication process of nanoelectronic device arrays based on single-wall carbon nanotube (SWCNT), oriented alignment of SWCNTs and property modification of metallic SWCNTs in the array are the key problems to be solved. Pulse gas alignment with substrate downward tilt is proposed to realize the controllable alignment of SWCNTs. Experimental results demonstrate that 84% SWCNTs are aligned in -15°―15° angular to the pulse gas direction. A modified nanomanipulation technology based on atomic force microscope (AFM) is utilized to perform various kinds of SWCNT manipulation, such as SWCNT separation from the "Y" CNT, catalyst removal from the SWCNT end, continual nano buckles fabrication on SWCNT and even stretching to break, which provides a feasible way to modify the size, shape and the electrical property of SWCNTs.