The simulation and analysis of S-shaped waveguide bend are presented.Bend radius larger than 30 mm assures less than 0.5 dB radiation loss for a 4-μm-wide silicon-on-insulator waveguide bend with 2-μm etch depth.Int...The simulation and analysis of S-shaped waveguide bend are presented.Bend radius larger than 30 mm assures less than 0.5 dB radiation loss for a 4-μm-wide silicon-on-insulator waveguide bend with 2-μm etch depth.Intersection angle greater than 20° provides negligible crosstalk (<-30 dB) and very low insertion loss.Any reduction in bend radius and intersection angle is at the cost of the degradation of characteristics of bent waveguide and intersecting waveguide, respectively.展开更多
The blue band (BB) in low temperature photoluminescence of Mg-doped GaN films with different Mg concentrations is investigated.The BB peak of as-grown samples with higher Mg concentration centres at lower energy.A shi...The blue band (BB) in low temperature photoluminescence of Mg-doped GaN films with different Mg concentrations is investigated.The BB peak of as-grown samples with higher Mg concentration centres at lower energy.A shift of the BB peak energy is observed after annealing in N2 at different temperatures,meanwhile,the difference between the BB peak energy is observed after annealing in N2 at different temperatures.Meanwhile,the difference between the BB peak energies diminishes for raised annealing temperature,and the BB peaks for different samples converge to 2.92eV after annealing at 850℃.These experimental results can be accounted for by a model based on compensation effect.The shift of BB lines provides a useful criterion for the optimum annealing temperature of the Mg-doped GaN material,and the value is taken to be 850℃ in our case.展开更多
Piezoelectric ZnO layers with high resistivity for surface acoustic wave applications were prepared on polycrystalline diamond/Si substrates with(111) orientation via metal-organic chemical vapour deposition. The char...Piezoelectric ZnO layers with high resistivity for surface acoustic wave applications were prepared on polycrystalline diamond/Si substrates with(111) orientation via metal-organic chemical vapour deposition. The characteristics of the films were optimized through different growth methods. The comparative study of the X-ray diffraction spectra and scanning electron microscopic images showed that the final-prepared ZnO films were dominantly c-axis oriented. Zn and O elements in the final prepared ZnO films were investigated through X-ray photoelectron spectroscopy. According to the statistical results, the n(Zn)/n(O) ratio is near 1. The Raman scattering was also performed in back scattering configuration. E2 mode was observed for the final films, which indicated that the better quality ZnO films had been obtained. The resistivity of the films was also enhanced via the modification of the growth methods.展开更多
Abstract: Organic multiple quantum well(OMQ) structures consisting of alternating layers of tris(8 - quinolinolato)aluminum( ff) (Alq3) and 2 - (4 - biphenylyl) -5 - (4 - ter - butylphenyl) -(1,3,3- oxadiazole) (PBD) ...Abstract: Organic multiple quantum well(OMQ) structures consisting of alternating layers of tris(8 - quinolinolato)aluminum( ff) (Alq3) and 2 - (4 - biphenylyl) -5 - (4 - ter - butylphenyl) -(1,3,3- oxadiazole) (PBD) have been fabricated by organic molecular beam deposition (OMBD). The individual layer thickness in the multilayer samples was varied from 6 nm to 20 nm. The multiple quantum well structures were determined by low angle X - ray diffraction, optical absorption and photolumi-nescence(PL). The PL spectra narrow and the emission energy has been observed to shift to higher energy compared with that in the monolayer structure, suggesting a quantum size effect.展开更多
文摘The simulation and analysis of S-shaped waveguide bend are presented.Bend radius larger than 30 mm assures less than 0.5 dB radiation loss for a 4-μm-wide silicon-on-insulator waveguide bend with 2-μm etch depth.Intersection angle greater than 20° provides negligible crosstalk (<-30 dB) and very low insertion loss.Any reduction in bend radius and intersection angle is at the cost of the degradation of characteristics of bent waveguide and intersecting waveguide, respectively.
文摘The blue band (BB) in low temperature photoluminescence of Mg-doped GaN films with different Mg concentrations is investigated.The BB peak of as-grown samples with higher Mg concentration centres at lower energy.A shift of the BB peak energy is observed after annealing in N2 at different temperatures,meanwhile,the difference between the BB peak energy is observed after annealing in N2 at different temperatures.Meanwhile,the difference between the BB peak energies diminishes for raised annealing temperature,and the BB peaks for different samples converge to 2.92eV after annealing at 850℃.These experimental results can be accounted for by a model based on compensation effect.The shift of BB lines provides a useful criterion for the optimum annealing temperature of the Mg-doped GaN material,and the value is taken to be 850℃ in our case.
文摘Piezoelectric ZnO layers with high resistivity for surface acoustic wave applications were prepared on polycrystalline diamond/Si substrates with(111) orientation via metal-organic chemical vapour deposition. The characteristics of the films were optimized through different growth methods. The comparative study of the X-ray diffraction spectra and scanning electron microscopic images showed that the final-prepared ZnO films were dominantly c-axis oriented. Zn and O elements in the final prepared ZnO films were investigated through X-ray photoelectron spectroscopy. According to the statistical results, the n(Zn)/n(O) ratio is near 1. The Raman scattering was also performed in back scattering configuration. E2 mode was observed for the final films, which indicated that the better quality ZnO films had been obtained. The resistivity of the films was also enhanced via the modification of the growth methods.
文摘Abstract: Organic multiple quantum well(OMQ) structures consisting of alternating layers of tris(8 - quinolinolato)aluminum( ff) (Alq3) and 2 - (4 - biphenylyl) -5 - (4 - ter - butylphenyl) -(1,3,3- oxadiazole) (PBD) have been fabricated by organic molecular beam deposition (OMBD). The individual layer thickness in the multilayer samples was varied from 6 nm to 20 nm. The multiple quantum well structures were determined by low angle X - ray diffraction, optical absorption and photolumi-nescence(PL). The PL spectra narrow and the emission energy has been observed to shift to higher energy compared with that in the monolayer structure, suggesting a quantum size effect.
