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Effects of power on ion behaviors in radio-frequency magnetron sputtering of indium tin oxide(ITO)
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作者 李茂洋 莫超超 +7 位作者 陈佳丽 季佩宇 谭海云 张潇漫 崔美丽 诸葛兰剑 吴雪梅 黄天源 《Plasma Science and Technology》 SCIE EI CAS CSCD 2024年第7期116-122,共7页
This study delves into ion behavior at the substrate position within RF magnetron discharges utilizing an indium tin oxide(ITO)target.The positive ion energies exhibit an upward trajectory with increasing RF power,att... This study delves into ion behavior at the substrate position within RF magnetron discharges utilizing an indium tin oxide(ITO)target.The positive ion energies exhibit an upward trajectory with increasing RF power,attributed to heightened plasma potential and initial emergent energy.Simultaneously,the positive ion flux escalates owing to amplified sputtering rates and electron density.Conversely,negative ions exhibit broad ion energy distribution functions(IEDFs)characterized by multiple peaks.These patterns are clarified by a combination of radiofrequency oscillation of cathode voltage and plasma potential,alongside ion transport time.This elucidation finds validation in a one-dimensional model encompassing the initial ion energy.At higher RF power,negative ions surpassing 100 e V escalate in both flux and energy,posing a potential risk of sputtering damages to ITO layers. 展开更多
关键词 RF magnetron sputtering ITO film ion energy distribution functions plasma diagnosis
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Review on Metallization Approaches for High-Efficiency Silicon Heterojunction Solar Cells
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作者 Yulian Zeng Chen-Wei Peng +4 位作者 Wei Hong Shan Wang Cao Yu Shuai Zou Xiaodong Su 《Transactions of Tianjin University》 EI CAS 2022年第5期358-373,共16页
Crystalline silicon(c-Si)heterojunction(HJT)solar cells are one of the promising technologies for next-generation industrial high-efficiency silicon solar cells,and many efforts in transferring this technology to high... Crystalline silicon(c-Si)heterojunction(HJT)solar cells are one of the promising technologies for next-generation industrial high-efficiency silicon solar cells,and many efforts in transferring this technology to high-volume manufacturing in the photovoltaic(PV)industry are currently ongoing.Metallization is of vital importance to the PV performance and long-term reliability of HJT solar cells.In this review,we summarize the development status of metallization approaches for highefficiency HJT solar cells.For conventional screen printing technology,to avoid the degradation of the passivation properties of the amorphous silicon layer,a low-temperature-cured(<250℃)paste and process are needed.This process,in turn,leads to high line/contact resistances and high paste costs.To improve the conductivity of electrodes and reduce the metallization cost,multi-busbar,fine-line printing,and low-temperature-cured silver-coated copper pastes have been developed.In addition,several potential metallization technologies for HJT solar cells,such as the Smart Wire Contacting Technology,pattern transfer printing,inkjet/FlexTrailprinting,and copper electroplating,are discussed in detail.B ased on the summary,the potential and challenges of these metallization technologies for HJT solar cells are analyzed. 展开更多
关键词 Silicon solar cells Passivating-contact HETEROJUNCTION METALLIZATION ELECTRODE
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