High-performance inverters based on ambipolar organic-inorganic heterojunction thin-film transistors

This work reports on the integration of organic and inorganic semiconductors as heterojunction active layers for high-performance ambipolar transistors and complementary metal-oxide-semiconductor(CMOS)-like inverters.Pentacene is employed as a p-type organic semiconductor for its stable electrical performance,while the solution-processed scandium(Sc)substituted indium oxide(ScInO)is employed as an n-type inorganic semiconductor.It is observed that by regulating the doping concentration of Sc,the electrical performance of the n-type semiconductor could be well controlled to obtain a balance with the electrical performance of the p-type semiconductor,which is vital for achieving high-performance inverters.When the doping concentration of Sc is 10 at.%,the CMOS-like logic inverters exhibit a voltage gain larger than 80 and a wide noise margin(53%of the theoretical value).The inverters also respond well to the input signal with frequency up to 500 Hz.

Alleviating the crosstalk effect via a fine-moulded light-blocking matrix for colour-converted micro-LED display with a 122% NTSC gamut

One of the major challenges when fabricating high gamut colour-converted micro-light-emitting diodes(LEDs)displays is severe crosstalk effect among adjacent pixels because of the wide view-angle feature of micro-LED chips.In this study,potential factors that contribute to the crosstalk effect were systematically simulated.We observed that precisely filling the space between each micro-LED chip with a light blocking matrix(LBM)can be a promising solution to alleviate this risk.After careful investigations,a press-assisted moulding technique was demonstrated to be an effective approach of fabricating the LBM.Nevertheless,experimental observations further revealed that residual black LBM on the surface of micro-LEDs severely reduces the brightness,thereby compromising the display performance.This problem was successfully addressed by employing a plasma etching technique to efficiently extract the trapped light.Eventually,a top-emitting blue micro-LED-based backlight fine-moulded with a black LBM was developed and combined with red and green quantum dot colour-conversion layers for full-colour display.The colour gamut of our manufactured display prototype can cover as high as 122%that of the National Television Standards Committee.

原子尺度制造BiFeO_(3)中头对头极化界面

铁电薄膜中的带电界面会产生低维的受限电荷,从而诱导很多诸如二维电子气等新奇的物理性质,在未来的纳米电子器件中具有很大的应用潜力.然而这些带电界面通常会产生巨大的退极化场,很难稳定存在.本文利用晶界工程在多铁Bi Fe O_(3)中制备几何结构和电荷密度可调控的带电界面.这些Bi Fe O_(3)晶界是以Sr Ti O_(3)双晶衬底为模板制备的,具有厘米级的二维尺寸和小于1 nm的厚度.通过压电力显微镜和球差矫正透射电子显微镜测量Bi Fe O_(3)晶界处极化取向和原子结构,我们发现10°,22.6°和36.8°的Bi Fe O_(3)晶界都会形成头对头的极化构型.另外,极化大小在晶界附近并没有受到明显的抑制,表明在晶界处自由载流子和缺陷等很好地屏蔽了极化电荷.因此,这种头对头的极化导致晶界处聚集极化电荷,形成了一个带电的二维界面.通过控制双晶模板的角度可以调控Bi Fe O_(3)中晶界的角度和携带的电荷量,为设计基于带电界面的器件提供了新思路.