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Criteria for versatile GaN MOVPE tool:high growth rate GaN by atmospheric pressure growth
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作者 Koh Matsumoto Kazutada Ikenaga +11 位作者 Jun Yamamoto Kazuki Naito Yoshiki Yano Akinori Ubukata Hiroki Tokunaga Tadanobu Arimura Katsuaki Cho Toshiya Tabuchi Akira Yamaguchi Yasuhiro Harada Yuzaburo Ban Kousuke Uchiyama 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第1期21-23,共3页
Growth rate has a direct impact on the productivity of nitride LED production. Atmospheric pressure growth of GaN with a growth rate as high as 10/zm/h and also Alo.lGao.gN growth of 1μm/h by using 4 inch by 11 produ... Growth rate has a direct impact on the productivity of nitride LED production. Atmospheric pressure growth of GaN with a growth rate as high as 10/zm/h and also Alo.lGao.gN growth of 1μm/h by using 4 inch by 11 production scale MOVPE are described. XRD of (002) and (102) direction was 200 arcsec and 250 arcsec, respectively. Impact of the growth rate on productivity is discussed. 展开更多
关键词 MOVPE GaN: AlGaN atmospheric pressure growth high growth rate
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