The relationship between ions irradiation and the induced microstructures(point defects,dislocations,clusters,etc.)could be better analyzed and explained by simulation.The mean field rate theory and cluster dynamics a...The relationship between ions irradiation and the induced microstructures(point defects,dislocations,clusters,etc.)could be better analyzed and explained by simulation.The mean field rate theory and cluster dynamics are used to simulate the effect of implanted Fe on the point defects concentration quantitatively.It is found that the depth distribution of point defect concentration is relatively gentle than that of damage calculated by SRIM software.Specifically,the damage rate and point defect concentration increase by 1.5 times and 0.6 times from depth of 120 nm to 825 nm,respectively.With the consideration of implanted Fe ions,which effectively act as interstitial atoms at the depth of high ion implantation rate,the vacancy concentration Cv decreases significantly after reaching the peak value,while the interstitial atom concentration Ci increases significantly after decline of the previous stage.At the peak depth of ion implantation,Cv dropped by 86%,and Ci increased by 6.2 times.Therefore,the implanted ions should be considered into the point defects concentration under high dose of heavy ion irradiation,which may help predict the concentration distribution of defect clusters,further analyzing the evolution behavior of solute precipitation.展开更多
The paper presents GEneral ReadOut (GERO), a general readout ASIC based on a switched capacitor array for micro-pattern gas detectors. It aims at providing general readout electronics for low-to-medium event-rate gas ...The paper presents GEneral ReadOut (GERO), a general readout ASIC based on a switched capacitor array for micro-pattern gas detectors. It aims at providing general readout electronics for low-to-medium event-rate gas detectors with high sampling frequency, configurable storage depth, and data digitalization. The first prototype GERO chip integrates 16 channels and was fabricated using a 0.18-lm CMOS process. Each channel consists of a sampling array working in a ping-pong mode, a storage array with a 1024-cell depth, and 32 Wilkinson analog-todigital converters. The detailed design and test results are presented in the paper.展开更多
基金the Special Funds for the Key Research and Development Program of the Ministry of Science and Technology of China(Grant No.2017YFB0702201).
文摘The relationship between ions irradiation and the induced microstructures(point defects,dislocations,clusters,etc.)could be better analyzed and explained by simulation.The mean field rate theory and cluster dynamics are used to simulate the effect of implanted Fe on the point defects concentration quantitatively.It is found that the depth distribution of point defect concentration is relatively gentle than that of damage calculated by SRIM software.Specifically,the damage rate and point defect concentration increase by 1.5 times and 0.6 times from depth of 120 nm to 825 nm,respectively.With the consideration of implanted Fe ions,which effectively act as interstitial atoms at the depth of high ion implantation rate,the vacancy concentration Cv decreases significantly after reaching the peak value,while the interstitial atom concentration Ci increases significantly after decline of the previous stage.At the peak depth of ion implantation,Cv dropped by 86%,and Ci increased by 6.2 times.Therefore,the implanted ions should be considered into the point defects concentration under high dose of heavy ion irradiation,which may help predict the concentration distribution of defect clusters,further analyzing the evolution behavior of solute precipitation.
基金supported by the National Natural Science Foundation of China(Nos.11675197 and 11775242)
文摘The paper presents GEneral ReadOut (GERO), a general readout ASIC based on a switched capacitor array for micro-pattern gas detectors. It aims at providing general readout electronics for low-to-medium event-rate gas detectors with high sampling frequency, configurable storage depth, and data digitalization. The first prototype GERO chip integrates 16 channels and was fabricated using a 0.18-lm CMOS process. Each channel consists of a sampling array working in a ping-pong mode, a storage array with a 1024-cell depth, and 32 Wilkinson analog-todigital converters. The detailed design and test results are presented in the paper.
