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Oxidation-enhanced bonding strength of Cu sinter joints during thermal storage test 被引量:2
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作者 Yue Gao Jinting Jiu +3 位作者 Chuantong Chen Katsuaki Suganuma Rong Sun Zhi-Quan Liu 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2022年第20期251-255,共5页
With the development in next-generation semiconductor power devices,the power devices based on silicon carbide(SiC)and gallium nitride(GaN)are expected to replace the traditional Si-based power devices[1–6].However,t... With the development in next-generation semiconductor power devices,the power devices based on silicon carbide(SiC)and gallium nitride(GaN)are expected to replace the traditional Si-based power devices[1–6].However,the foreseeable harsh operating environment such as heavy thermal-load or extremely temperature cycle required more reliable interconnection technology[4,7-9]. 展开更多
关键词 INTERCONNECTION THERMAL BONDING
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The relationship between formate adsorption energy and electronic properties: A first principles density functional theory study
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作者 MORIKAWA Yoshitada NAKAMURA Junji 《Science China Chemistry》 SCIE EI CAS 2009年第9期1427-1433,共7页
First principles density functional theory calculations have been performed for the chemisorption of formate adsorption on some metal surfaces. For the most stable adsorption site of short-bridge, the calculated forma... First principles density functional theory calculations have been performed for the chemisorption of formate adsorption on some metal surfaces. For the most stable adsorption site of short-bridge, the calculated formate adsorption energy follows the order of Au(110) < Ag(110) < Cu(110) < Pd(110) < Pt(110) < Ni(110) < Rh(110) < Fe(100) < Mo(100), and a clear linear correlation exists between the adsorption energy and the corresponding heat of formation of metal oxides. Moreover, it has been found that the formate adsorption energy for the transition metals can be correlated well with its d-band center (εd), and the IB Group metals can be described by the coupling matrix element square (Vad2). 展开更多
关键词 FORMATE metal DFT-GGA SLAB model adsorption energy d-band CENTER
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SnO-SnO_(2) modified two-dimensional MXene Ti3C2Tx for acetone gas sensor working at room temperature 被引量:6
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作者 Zijing Wang Fen Wang +7 位作者 Angga Hermawan Yusuke Asakura Takuya Hasegawa Hiromu Kumagai Hideki Kato Masato Kakihana Jianfeng Zhu Shu Yin 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2021年第14期128-138,共11页
Acetone,as widely used reagents in industry and laboratories,are extremely harmful to the human.So the detection of acetone gas concentrations and leaks in special environments at room temperature is essential.Herein,... Acetone,as widely used reagents in industry and laboratories,are extremely harmful to the human.So the detection of acetone gas concentrations and leaks in special environments at room temperature is essential.Herein,the nanocomposite combining SnO-SnO_(2)(p-n junction)and Ti_(3)C_(2)T_(x) MXene was successfully synthesized by a one-step hydrothermal method.Because of the existence of a small amount of oxygen during the hydrothermal conditions,part of the p-type SnO was oxidized to n-type SnO_(2),forming in-situ p-n junctions on the surface of Sn O.The hamburger-like SnO-SnO_(2)/Ti_(3)C_(2)T_(x) sensor exhibited improved acetone gas sensing response of 12.1(R_(g)/R_(a))at room temperature,which were nearly 11 and 4 times higher than those of pristine Ti_(3)C_(2)T_(x) and pristine SnO-SnO_(2),respectively.Moreover,it expressed a short recovery time(9 s)and outstanding reproducibility.Because of the different work functions,the Schottky barrier was formed between the SnO and the Ti_(3)C_(2)T_(x) nanosheets,acting as a hole accumulation layer(HALs)between Ti_(3)C_(2)T_(x) and tin oxides.Herein,the sensing mechanism based on the formation of hetero-junctions and high conductivity of the metallic phase of Ti_(3)C_(2)T_(x) MXene in SnO-SnO_(2)/Ti_(3)C_(2)T_(x) sensors was discussed in detail. 展开更多
关键词 p-n junction Ti_(3)C_(2)T_(x)MXene NANOCOMPOSITES Acetone gas sensor Room temperature sensing
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甲酸根吸附热与其电子性质之间的关联:第一性密度泛函理论研究
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作者 玛宏罹 王贵昌 +1 位作者 MORIKAWA Yoshitada NAKAMURA Junji 《中国科学(B辑)》 CSCD 北大核心 2009年第9期993-993,共1页
采用第一性密度泛函理论(DFT-GGA)研究了甲酸根(HCOO)在一系列金属表面的吸附.研究表明,HCOO的最稳定吸附位置是短桥位,吸附热顺序为Au(110)〈Ag(110)〈Cu(110)〈Pd(110)〈Pt(110)〈Ni(110)〈Rh(110)〈Fe(100)... 采用第一性密度泛函理论(DFT-GGA)研究了甲酸根(HCOO)在一系列金属表面的吸附.研究表明,HCOO的最稳定吸附位置是短桥位,吸附热顺序为Au(110)〈Ag(110)〈Cu(110)〈Pd(110)〈Pt(110)〈Ni(110)〈Rh(110)〈Fe(100)〈Mo(100).HCOO吸附热可以很好地与相应的金属氧化物生成热关联.另外还发现,过渡金属的吸附热与金属的小带中心有很好地关联,第1B金属吸附热可以用耦合矩阵平方来解释. 展开更多
关键词 甲酸根 金属 DFT-GGA平板模型 吸附热 d带中心
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