With the development in next-generation semiconductor power devices,the power devices based on silicon carbide(SiC)and gallium nitride(GaN)are expected to replace the traditional Si-based power devices[1–6].However,t...With the development in next-generation semiconductor power devices,the power devices based on silicon carbide(SiC)and gallium nitride(GaN)are expected to replace the traditional Si-based power devices[1–6].However,the foreseeable harsh operating environment such as heavy thermal-load or extremely temperature cycle required more reliable interconnection technology[4,7-9].展开更多
First principles density functional theory calculations have been performed for the chemisorption of formate adsorption on some metal surfaces. For the most stable adsorption site of short-bridge, the calculated forma...First principles density functional theory calculations have been performed for the chemisorption of formate adsorption on some metal surfaces. For the most stable adsorption site of short-bridge, the calculated formate adsorption energy follows the order of Au(110) < Ag(110) < Cu(110) < Pd(110) < Pt(110) < Ni(110) < Rh(110) < Fe(100) < Mo(100), and a clear linear correlation exists between the adsorption energy and the corresponding heat of formation of metal oxides. Moreover, it has been found that the formate adsorption energy for the transition metals can be correlated well with its d-band center (εd), and the IB Group metals can be described by the coupling matrix element square (Vad2).展开更多
Acetone,as widely used reagents in industry and laboratories,are extremely harmful to the human.So the detection of acetone gas concentrations and leaks in special environments at room temperature is essential.Herein,...Acetone,as widely used reagents in industry and laboratories,are extremely harmful to the human.So the detection of acetone gas concentrations and leaks in special environments at room temperature is essential.Herein,the nanocomposite combining SnO-SnO_(2)(p-n junction)and Ti_(3)C_(2)T_(x) MXene was successfully synthesized by a one-step hydrothermal method.Because of the existence of a small amount of oxygen during the hydrothermal conditions,part of the p-type SnO was oxidized to n-type SnO_(2),forming in-situ p-n junctions on the surface of Sn O.The hamburger-like SnO-SnO_(2)/Ti_(3)C_(2)T_(x) sensor exhibited improved acetone gas sensing response of 12.1(R_(g)/R_(a))at room temperature,which were nearly 11 and 4 times higher than those of pristine Ti_(3)C_(2)T_(x) and pristine SnO-SnO_(2),respectively.Moreover,it expressed a short recovery time(9 s)and outstanding reproducibility.Because of the different work functions,the Schottky barrier was formed between the SnO and the Ti_(3)C_(2)T_(x) nanosheets,acting as a hole accumulation layer(HALs)between Ti_(3)C_(2)T_(x) and tin oxides.Herein,the sensing mechanism based on the formation of hetero-junctions and high conductivity of the metallic phase of Ti_(3)C_(2)T_(x) MXene in SnO-SnO_(2)/Ti_(3)C_(2)T_(x) sensors was discussed in detail.展开更多
文摘With the development in next-generation semiconductor power devices,the power devices based on silicon carbide(SiC)and gallium nitride(GaN)are expected to replace the traditional Si-based power devices[1–6].However,the foreseeable harsh operating environment such as heavy thermal-load or extremely temperature cycle required more reliable interconnection technology[4,7-9].
基金Supported by the National Natural Science Foundation of China (Grants Nos. 20273034 & 20673063)
文摘First principles density functional theory calculations have been performed for the chemisorption of formate adsorption on some metal surfaces. For the most stable adsorption site of short-bridge, the calculated formate adsorption energy follows the order of Au(110) < Ag(110) < Cu(110) < Pd(110) < Pt(110) < Ni(110) < Rh(110) < Fe(100) < Mo(100), and a clear linear correlation exists between the adsorption energy and the corresponding heat of formation of metal oxides. Moreover, it has been found that the formate adsorption energy for the transition metals can be correlated well with its d-band center (εd), and the IB Group metals can be described by the coupling matrix element square (Vad2).
基金supported financially by the National Natural Science Foundation of China(Nos.,51572158 and 51972200)the Graduate Innovation Fund of Shaanxi University of Science&Technology+2 种基金funded by the Japan Society for the Promotion of Science(JSPS)Grant-in-Aid for the Scientific Research(KAKENHI Nos.20H00297 and Innovative Area“Mixed Anion”(No.16H06439))the Nippon Sheet Glass Foundation for Materials Science and Engineeringby the Dynamic Alliance for Open Innovations Bridging Human,Environment and Materials,the Cooperative Research Program of“Network Joint Research Center for Materials and Devices”。
文摘Acetone,as widely used reagents in industry and laboratories,are extremely harmful to the human.So the detection of acetone gas concentrations and leaks in special environments at room temperature is essential.Herein,the nanocomposite combining SnO-SnO_(2)(p-n junction)and Ti_(3)C_(2)T_(x) MXene was successfully synthesized by a one-step hydrothermal method.Because of the existence of a small amount of oxygen during the hydrothermal conditions,part of the p-type SnO was oxidized to n-type SnO_(2),forming in-situ p-n junctions on the surface of Sn O.The hamburger-like SnO-SnO_(2)/Ti_(3)C_(2)T_(x) sensor exhibited improved acetone gas sensing response of 12.1(R_(g)/R_(a))at room temperature,which were nearly 11 and 4 times higher than those of pristine Ti_(3)C_(2)T_(x) and pristine SnO-SnO_(2),respectively.Moreover,it expressed a short recovery time(9 s)and outstanding reproducibility.Because of the different work functions,the Schottky barrier was formed between the SnO and the Ti_(3)C_(2)T_(x) nanosheets,acting as a hole accumulation layer(HALs)between Ti_(3)C_(2)T_(x) and tin oxides.Herein,the sensing mechanism based on the formation of hetero-junctions and high conductivity of the metallic phase of Ti_(3)C_(2)T_(x) MXene in SnO-SnO_(2)/Ti_(3)C_(2)T_(x) sensors was discussed in detail.