A More Effective Method of Extracting the Characteristic Value of Pulse Wave Signal Based on Wavelet Transform

Pulse wave contains human physiological and pathological information. Different people will exhibit different characteristics, and hence determining the characteristic points of the pulse wave of human physiological health makes sense. It is common that we extract the characteristic value of pulse wave signal with the method based on wavelet transform on a small scale, and then determine the locations of the characteristic points by modulus maxima and modulus minima. Before determining characteristic value by detecting modulus maxima and modulus minima, we need to determine every period of the pulse wave. This paper presents a new kind of adaptive threshold determination method which is more effective. It can accurately determine every period of the pulse wave, and then extract characteristic values by modulus maxima and modulus minima in every period of the pulse wave. The method presented in this paper promotes the research utilizing pulse wave on health life.

A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region

A continuous yet analytic channel potential solution is proposed for doped symmetric double-gate （DG） MOSFETs from the accumulation to the strong-inversion region. Analytical channel potential relationship is derived from the complete 1-D Poisson equation physically, and the channel potential solution of the DG MOSFET is obtained analytically. The extensive comparisons between the presented solution and the numerical simulation illustrate that the solution is not only accurate and continuous in the whole operation regime of DG MOSFETs, but also valid to wide doping concentration and various geometrical sizes, without employing any fitting parameter.

Design and implementation of a high sensitivity fully integrated passive UHF RFID tag

A fully integrated passive UHF RFID tag complying with the ISO 18000-6B protocol is presented, which includes an analog front-end, a baseband processor, and an EEPROM memory. To extend the communication range, a high efficiency differential-drive CMOS rectifier is adopted. A novel high performance voltage limiter is used to provide a stable limiting voltage, with a 172 mV voltage variation against temperature variation and process dispersion. The dynamic band-enhancement technique is used in the regulator circuit to improve the regulating capacity. A rail-to-rail hysteresis comparator is adopted to demodulate the signal correctly in any condition. The whole transponder chip is implemented in a 0.18μm CMOS process, with a die size of 900 × 800 μm2. Our measurement results show that the total power consumption of the tag chip is only 6.8 μW, with a sensitivity of -13.5 dBm.

One-dimensional continuous analytic potential solution to generic oxide-silicon-oxide system

A one-dimensional continuous analytic potential solution to a generic oxide-silicon^xide system is developed. With the analytic solution, the potential distribution in the silicon film is predicted. A physics-based relation between surface potentials is also derived and then applied to the generic oxide-silicon-oxide metal oxide-semiconductor field-effect transistors （MOSFETs） for the calculation of surface potentials

An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor

This paper studies an oxide/silicon core/shell nanowire MOSFET （OS-CSNM）. Through three-dimensional device simulations, we have demonstrated that the OS-CSNM has a lower leakage current and higher Ion/Ioff ratio after intro- ducing the oxide core into a traditional nanowire MOSFET （TNM）. The oxide/silicon OS-CSNM structure suppresses threshold voltage roll-off, drain induced barrier lowering and subthreshold swing degradation. Smaller intrinsic device delay is also observed in OS-CSNM in comparison with that of TNM.

Noninvasive Blood Glucose Measurement Based on NIR Spectrums and Double ANN Analysis

This paper presents a new noninvasive blood glucose monitoring method based on four near infrared spectrums and double artificial neural network analysis. We choose four near infrared wavelengths, 820 nm, 875 nm, 945 nm, 1050 nm, as transmission spectrums, and capture four fingers transmission PPG signals simultaneously. The wavelet transform algorithm is used to remove baseline drift, smooth signals and extract eight eigenvalues of each PPG signal. The eigenvalues are the input parameters of double artificial neural network analysis model. Double artificial neural network regression combines the classification recognition algorithm with prediction algorithm to improve the accuracy of measurement. Experiments show that the root mean square error of the prediction is between 0.97 mg/dL - 6.69 mg/dL, the average of root mean square error is 3.80 mg/dL.

A SPICE model for a phase-change memory cell based on the analytical conductivity model

By way of periphery circuit design of the phase-change memory,it is necessary to present an accurate compact model of a phase-change memory cell for the circuit simulation.Compared with the present model,the model presented in this work includes an analytical conductivity model,which is deduced by means of the carrier transport theory instead of the fitting model based on the measurement.In addition,this model includes an analytical temperature model based on the 1D heat-transfer equation and the phase-transition dynamic model based on the JMA equation to simulate the phase-change process.The above models for phase-change memory are integrated by using Verilog-A language,and results show that this model is able to simulate theⅠ-Ⅴcharacteristics and the programming characteristics accurately.

Benchmark tests on symmetry and continuity characteristics between BSIM4 and ULTRA-BULK

This paper presents the benchmark test results on the symmetry and continuity characteristics between BSIM4 from Berkeley and ULTRA-BULK from Peking University. It is shown that the industry standard model BSIM4 has a series of the shortcomings of the continuity and symmetry, such as the charge, high-order current derivatives, and the trans-capacitances while the latest advanced surface-potential based MOSFET compact model, ULTRA-BULK, demonstrates all necessary continuity and symmetry characteristics, which are very important for analog and RF circuit design.

A passive UHF RFID tag with a dynamic-V_(th)-cancellation rectifier

This paper presents a passive UHF RFID tag with a dynamicVthcancellation （DVC） rectifier. In the rectifier, the threshold voltages of MOSFETs are cancelled by applying gate bias voltages, which are dynamically changed according to the states of the MOSFETs. The DVC rectifier enables both low ONresistance and small re verse leakage of the MOSFETs, resulting in high power conversion efficiency （PCE）. An areaefficient demodulator with a novel average detector is also designed, which takes advantage of the rectifier＇s first stage as the envelope detector. The whole tag chip is implemented in a 0.18 μm CMOS process with a die size of 880 x 950μm2. Measurement results show that the rectifier achieves a maximum PCE of 53.7% with 80 kΩ resistor load.

A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure

A high performance trench insulated gate bipolar transistor which combines a semi-superjunction struc- ture and an accumulation channel （sSJTAC-IGBT） is proposed for the first time. Compared with the TAC-IGBT, the new device not only retains the advantages of the accumulation channel, but also obtains a larger breakdown voltage （BV）, a faster turn-off speed and a smaller saturation current level while keeping the on-state voltage drop lower as the TAC-IGBT does as well. Therefore, the new structure enlarges the short circuit safe operating area （SCSOA） and reduces the energy loss during the turn-off process.

A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs

A surface potential based non-charge-sheet core model for cylindrical undoped surrounding-gate （SRG） MOSFETs is presented. It is based on the exact surface potential solution of Poisson＇s equation and Pao-Sah＇s dual integral without the charge-sheet approximation, allowing the SRG-MOSFET characteristics to be adequately described by a single set of the analytic drain current equation in terms of the surface potential evaluated at the source and drain ends. It is valid for all operation regions and traces the transition from the linear to saturation and from the sub-threshold to strong inversion region without fitting-parameters, and verified by the 3-D numerical simulation.