An Al0.25Ga0.75N/GaN Lateral Field Emission Device with a Nano Void Channel

We report an Al_(0.25)Ga_(0.75)N/Ga N based lateral field emission device with a nanometer scale void channel. A～45 nm void channel is obtained by etching out the SiO_2 sacrificial dielectric layer between the semiconductor emitter and the metal collector. Under an atmospheric environment instead of vacuum conditions, the Ga Nbased field emission device shows a low turn-on voltage of 2.3 V, a high emission current of ～40 μA(line current density 2.3 m A/cm) at a collector bias VC = 3 V, and a low reverse leakage of 3 nA at VC =-3 V. These characteristics are attributed to the nanometer scale void channel as well as the high density of two-dimensional electron gas in the Al Ga N/Ga N heterojunction. This type of device may have potential applications in high frequency microelectronics or nanoelectronics.

Temperature-switching logic in MoS2 single transistors

Due to their unique characteristics,two-dimensional(2D)materials have drawn great attention as promising candidates for the next generation of integrated circuits,which generate a calculation unit with a new working mechanism,called a logic transistor.To figure out the application prospects of logic transistors,exploring the temperature dependence of logic characteristics is important.In this work,we explore the temperature effect on the electrical characteristic of a logic transistor,finding that changes in temperature cause transformation in the calculation:logical output converts from‘AND’at 10 K to‘OR’at 250 K.The transformation phenomenon of temperature regulation in logical output is caused by energy band which decreases with increasing temperature.In the experiment,the indirect band gap of MoS2 shows an obvious decrease from 1.581 eV to 1.535 eV as the temperature increases from 10 K to 250 K.The change of threshold voltage with temperature is consistent with the energy band,which confirms the theoretical analysis.Therefore,as a promising material for future integrated circuits,the demonstrated characteristic of 2D transistors suggests possible application for future functional devices.

Transmission enhancement properties of double-layered metallic hole arrays

We report experimental results on enhanced light transmission through double-layered(Ag/Au)metallic hole arrays within a skin-depth.Zero-order transmission spectrums are characterized as a function of Ag film's thickness,which extends fromδ/15,δ/6 to approximatelyδ,whereδis a skin-depth.In contrast with other reported results(Refs.[11-13])in single-layered metallic hole arrays,our experimental results show much more dramatic properties of transmission process dependent on sub-δthickness.It is shown that there is no negligible transmission enhancement atδ/15.Atδ/6,much higher transmission efficiency can be achieved.With film's thickness being close toδ,the transmission efficiency declines contrarily. Simultaneously,the corresponding resonant peak also slightly moves toward the shorter wavelength.It is proposed that the coupling of surface plasmon polaritons(SPPs)at Ag/Au interface withinδis involved in the process.