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Optimized growth and dielectric properties of barium titanate thin films on polycrystalline Ni foils 被引量:4
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作者 梁伟正 吉彦达 +5 位作者 南天翔 黄江 曾慧中 杜辉 陈充林 林媛 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第6期498-503,共6页
Barium titanate(BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition(PAD) technique.The growth conditions including ambient and annealing temperatures were carefully ... Barium titanate(BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition(PAD) technique.The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion.Crystal structures,surface morphologies,and dielectric performance were examined and compared for BTO thin films annealed under different temperatures.Correlations between the fabrication conditions,microstructures,and dielectric properties were discussed.BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with εr~ 400 and tan δ 〈 0.025 at 100 kHz.The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications. 展开更多
关键词 polymer assisted deposition barium titanate nickel foils thin films thermodynamics dielectric properties
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HIGH EPITAXIAL FERROELECTRIC RELAXOR Mn-DOPED Ba(Zr,Ti)O_(3) THIN FILMS ON MgO SUBSTRATES
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作者 M.LIU J.LIU +11 位作者 G.COLLINS C.R.MA C.L.CHEN A.D.ALEMAYEHU G.SUBRAMANYAM C.DAI Y.LIN J.HE J.C.JIANG E.I.MELETIS A.BHALLA Q.Y.ZHANG 《Journal of Advanced Dielectrics》 CAS 2011年第4期383-387,共5页
Environment friendly ferroelectric relaxor Ba(Zr_(0.2)Ti_(0.8))O_(3)thin fims with the addition of 2%Mn dopant were grown on(001)MgO substrates by pulsed laser deposition.Microstructure studies with X-ray di®ract... Environment friendly ferroelectric relaxor Ba(Zr_(0.2)Ti_(0.8))O_(3)thin fims with the addition of 2%Mn dopant were grown on(001)MgO substrates by pulsed laser deposition.Microstructure studies with X-ray di®raction and transmission electron microscopy reveal that the as-grown Ba(Zr_(0.2)Ti_(0.8))O_(3) thin films are c-axis oriented with an atomic sharp interface.The films have good single crystallinity and good epitaxial quality.The interface relationship was determined to be[100]Mn.BZT//[100]MgO and(001)Mn.BZT//(001)MgO.Nanoscale order/disorder relaxor structures were found with nano-columnar structures.The microwave dielectric measurements(15-18GHz)indicate that the¯lms have excellent dielectric properties with large dielectric constant value,high tunability,and low dielectric loss,promising the development of room temperature tunable microwave elements. 展开更多
关键词 Ferroelectric relaxor thin films Ba(Zr_(0.2)Ti_(0.8))O_(3) dielectric microwave
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