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New type X—ray mask fabricated using inductvely coupled plasma deepetching
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作者 D.Chen W.Lei +5 位作者 S.Wang C.Li X.Guo H.Mao D.Zhang F.Yi 《Beijing Synchrotron Radiation Facility》 2001年第2期100-103, ,共4页
The fabrication of X-ray masks is a critical and challenging process in LIGA technique.As inductively coupled plasma(ICP) deepetching appears to be the most suitable source for deep silicon etching,we fabricated a new... The fabrication of X-ray masks is a critical and challenging process in LIGA technique.As inductively coupled plasma(ICP) deepetching appears to be the most suitable source for deep silicon etching,we fabricated a new type X-ray mask using this technique.In comparison with other types of X-ray masks,the mask we fabricated has the advantages of its low cost and its simple fabrication process.Besired microstructures have also been fabricated using this new type X-ray mask in LIGA technique. 展开更多
关键词 掩膜 X射线 等离子体刻蚀 微加工
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