The compound GdNiSn has been studied by X-ray powder diffraction technique.The crystal structure and the X-ray diffraction data for this compound at room temperature are reported.The compound GdNiSn is orthorhombic wi...The compound GdNiSn has been studied by X-ray powder diffraction technique.The crystal structure and the X-ray diffraction data for this compound at room temperature are reported.The compound GdNiSn is orthorhombic with lattice parameters a=7.2044(1)A,b=7.6895(6)A,c=4.4772(4)A,space group Pna2_(1) and 4 formula units of GdNiSn in unit cell.The Smith and Snyder figure of index F_(30) for this compound is 35(0.015,59).展开更多
Determination of substitutional carbon in SI-GaAs thin wafers was investigated by FT-IR microscope at room temperature for the first time. The experimental results showed that the carbon concentration in GaAs thin waf...Determination of substitutional carbon in SI-GaAs thin wafers was investigated by FT-IR microscope at room temperature for the first time. The experimental results showed that the carbon concentration in GaAs thin wafers can be measured directly with simple treatment. The calculation method of carbon concentration is in agreement with that for normal IR spectrum with 0.5cm-1 resolution. The resolution of 1cm-1 can be taken in order to obtain a high signal-to-noise (S/N) ratio using 2.34×1016 cm-2 calibration factor for calculating carbon concentration at room temperature.展开更多
The local vibration mode(LVM)of carbon acceptor in GaAs is studied by measuring directly the change in LVM absorption with a NIC-170 SX FT-IR spectrometer.The change in the charge state of carbon acceptor and the temp...The local vibration mode(LVM)of carbon acceptor in GaAs is studied by measuring directly the change in LVM absorption with a NIC-170 SX FT-IR spectrometer.The change in the charge state of carbon acceptor and the temperature dependence of the LVM absorption were investigated also.The contents of the impurities other than carbon were estimated by secondary ion mass spectrometry.It is observed that the frequency,the spectral form and the integrated absorption of the LVM are not affected by the change in charge state of car- bon acceptor.展开更多
Due to ineffectiveness of routine IR-absorption method for determinahon of intershtial oxygen in heavily doped silicon, a 'peak-height' method has been dcveloped. The phosphorus-doped CZ-Si with n=(7.l～l2)...Due to ineffectiveness of routine IR-absorption method for determinahon of intershtial oxygen in heavily doped silicon, a 'peak-height' method has been dcveloped. The phosphorus-doped CZ-Si with n=(7.l～l2)× 10~17cm^(-3) was taken as sample for characterization. The calculation results at 300 K and 10 K were ptesented in detail. The'peak-height' method is much simpler than 'short-baseline' and 'curved-baseline' methods.展开更多
Total EL2 concentration distribution and net acceptor concentration distribution in uncloped semi-insulating(SI) LEC GaAs have been measured by multi-wavelength infrared absorption method. The experimental results ind...Total EL2 concentration distribution and net acceptor concentration distribution in uncloped semi-insulating(SI) LEC GaAs have been measured by multi-wavelength infrared absorption method. The experimental results indicate that total EL2 concentration radial distribution is W-shaped and net acceptor concentration radial distribution is sample-dependent, it can present a n shape, a A shape, or a W shape corresponding to different samples.展开更多
基金Supported by a Grant-in-Aid from the International Centre for Diffraction Data and the Natural Science Foundation of Guangxi Zhuang Autonomous Region。
文摘The compound GdNiSn has been studied by X-ray powder diffraction technique.The crystal structure and the X-ray diffraction data for this compound at room temperature are reported.The compound GdNiSn is orthorhombic with lattice parameters a=7.2044(1)A,b=7.6895(6)A,c=4.4772(4)A,space group Pna2_(1) and 4 formula units of GdNiSn in unit cell.The Smith and Snyder figure of index F_(30) for this compound is 35(0.015,59).
文摘Determination of substitutional carbon in SI-GaAs thin wafers was investigated by FT-IR microscope at room temperature for the first time. The experimental results showed that the carbon concentration in GaAs thin wafers can be measured directly with simple treatment. The calculation method of carbon concentration is in agreement with that for normal IR spectrum with 0.5cm-1 resolution. The resolution of 1cm-1 can be taken in order to obtain a high signal-to-noise (S/N) ratio using 2.34×1016 cm-2 calibration factor for calculating carbon concentration at room temperature.
文摘The local vibration mode(LVM)of carbon acceptor in GaAs is studied by measuring directly the change in LVM absorption with a NIC-170 SX FT-IR spectrometer.The change in the charge state of carbon acceptor and the temperature dependence of the LVM absorption were investigated also.The contents of the impurities other than carbon were estimated by secondary ion mass spectrometry.It is observed that the frequency,the spectral form and the integrated absorption of the LVM are not affected by the change in charge state of car- bon acceptor.
文摘Due to ineffectiveness of routine IR-absorption method for determinahon of intershtial oxygen in heavily doped silicon, a 'peak-height' method has been dcveloped. The phosphorus-doped CZ-Si with n=(7.l～l2)× 10~17cm^(-3) was taken as sample for characterization. The calculation results at 300 K and 10 K were ptesented in detail. The'peak-height' method is much simpler than 'short-baseline' and 'curved-baseline' methods.
文摘Total EL2 concentration distribution and net acceptor concentration distribution in uncloped semi-insulating(SI) LEC GaAs have been measured by multi-wavelength infrared absorption method. The experimental results indicate that total EL2 concentration radial distribution is W-shaped and net acceptor concentration radial distribution is sample-dependent, it can present a n shape, a A shape, or a W shape corresponding to different samples.
