Nitrogen-doped diamond films have been synthesized by EA-CVD (electron assisted chemical vapor deposition) technique. The quality and nitrogen impurity states of the diamond films are characterized by SEM,raman spectr...Nitrogen-doped diamond films have been synthesized by EA-CVD (electron assisted chemical vapor deposition) technique. The quality and nitrogen impurity states of the diamond films are characterized by SEM,raman spectroscopy,XPS and EPR spectroscopy,respectively. The results show that the morphology changes from well-defined facets to cauliflower-like structures,the content of amorphous carbon increases and the quality drops with increasing the nitrogen flow rate. Furthermore,in the films,it can be observed that nitrogen impurity exists in the forms of Ns0,[N-V]0 and [N-V]-1. The contents of [N-V]0 and [N-V]-1 are lower when the nitrogen flow rate is relatively high,and the concentration of Ns0 varies from 15 ppm to 483 ppm.展开更多
The diamond films adherent to Si substrate are deposited with the microwave plasma CVD(MPCVD) at microwave powers of 6000 W and 4000 W from 6 h to 10 h,respectively,the internal stresses of the films are measured by X...The diamond films adherent to Si substrate are deposited with the microwave plasma CVD(MPCVD) at microwave powers of 6000 W and 4000 W from 6 h to 10 h,respectively,the internal stresses of the films are measured by XRD.Spectral peak shift and widening are applied to calculate the magnitudes of macro and micro stresses.The results show that the macro stress is tensile.The internal stress can be controlled by the microwave power.With the microwave power increasing,the intrinsic and macro stresses decrease,and the micro stress increases significantly.Also,it can be found that the macro and micro stresses increase with deposited time when the other conditions are the same.展开更多
基金the National Natural Science Foundation of China (No.60576011)the Natural Science Foundation of Tianjin (No.06TXTJJC14701,and No.08JCZDJC22700)
文摘Nitrogen-doped diamond films have been synthesized by EA-CVD (electron assisted chemical vapor deposition) technique. The quality and nitrogen impurity states of the diamond films are characterized by SEM,raman spectroscopy,XPS and EPR spectroscopy,respectively. The results show that the morphology changes from well-defined facets to cauliflower-like structures,the content of amorphous carbon increases and the quality drops with increasing the nitrogen flow rate. Furthermore,in the films,it can be observed that nitrogen impurity exists in the forms of Ns0,[N-V]0 and [N-V]-1. The contents of [N-V]0 and [N-V]-1 are lower when the nitrogen flow rate is relatively high,and the concentration of Ns0 varies from 15 ppm to 483 ppm.
基金supported by the National Natural Science Foundation of China(No.60576011)Key Laboratory Foundation of Tianjin(No.06TXTJJC14701)Colleges and Universities Foundation of Tianjin(No.20050519)
文摘The diamond films adherent to Si substrate are deposited with the microwave plasma CVD(MPCVD) at microwave powers of 6000 W and 4000 W from 6 h to 10 h,respectively,the internal stresses of the films are measured by XRD.Spectral peak shift and widening are applied to calculate the magnitudes of macro and micro stresses.The results show that the macro stress is tensile.The internal stress can be controlled by the microwave power.With the microwave power increasing,the intrinsic and macro stresses decrease,and the micro stress increases significantly.Also,it can be found that the macro and micro stresses increase with deposited time when the other conditions are the same.
