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晶圆干燥缺陷的机理与控制 被引量:1
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作者 G.W.Gale H.Ohno +3 位作者 H.Namba T.Orii Y.Takagi M.Yamasaka 《电子工业专用设备》 2005年第7期29-33,共5页
长期以来,人们对于硅片在经过HF湿法处理之后出现的水印早已有所认识,尤其是图形包含亲水和疏水层时最为明显。我们系统地研究了经过HF后道处理之缺陷形成的机理,并确认了与先前报道的水印截然不同的缺陷类型。根据X射线和其它分析表明... 长期以来,人们对于硅片在经过HF湿法处理之后出现的水印早已有所认识,尤其是图形包含亲水和疏水层时最为明显。我们系统地研究了经过HF后道处理之缺陷形成的机理,并确认了与先前报道的水印截然不同的缺陷类型。根据X射线和其它分析表明,认为这些缺陷与周围环境残余的汽相HF和随后的晶圆表面反应有关。根据反应腔室HF浓度的不同可以产生不同类型的缺陷。由于水印是由硅在水中的氧化和随后产生的氧化物的分解形成的,少量的HF具有加速这个过程的效果。形成不同缺陷的条件,还有避免这些缺陷的策略均得以认定。正确的排空管理是一个关键的因素。最后发现,重参杂的硅更易产生缺陷。 展开更多
关键词 表面缺陷 水印 机理分析 缺陷控制
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无图形损伤的选择性去除微小尘粒的湿法清洗技术(英文)
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作者 Takehiko Orii Takayuki Toshima +1 位作者 Kenji Sekiguchi Glenn W.Gale 《电子工业专用设备》 2004年第11期17-22,共6页
The drastic shrinking of semiconductor linewidths has led to a need for new wafer cleaning strategies in the FEOL.For past technology generations,particle removal has been accomplished typical-ly using the SC1(NH4OH?H... The drastic shrinking of semiconductor linewidths has led to a need for new wafer cleaning strategies in the FEOL.For past technology generations,particle removal has been accomplished typical-ly using the SC1(NH4OH?H2O2?H2O)solution in conjunction with megasonic energy in a wet bench,or by DI water with a high pressure jet or megasonic nozzle in a wafer scrubber.However,such techniques have been found to damage patterns,particularly narrow polysilicon gate lines.Furthermore,the etching of oxide associated with SC1,which facilitates particle removal by an undercutting mechanism,has re cently become a concern due to increas-ingly strict oxide budgets.An alternative technique using an atomized liquid spray nozzle on a single wafer platform is proposed.Small droplets are able to effect particle removal without damage to sensitive patterns,by control of their carrier gas(N2)flow rate.Mechanisms for particle removal will be discussed.Results using this technique show particle removal comparable to megasonics can be achieved.Further-more,90nm and65nm polysilicon gate structures were processed with high particle removal efficiency and no damage,as were Al lines.Effects of the N2flow rate on particle removal and damage performance will be presented.The physical mechanism of atomized spray enables chemical etching of oxides to be minimized without sacrificing particle removal efficiency.Results using this technique in conjunction with chemistry,to further improve particle removal,will be presented.Results over a large range of parti-cle sizes will be shown.Specific applications will be discussed. 展开更多
关键词 尘粒 湿法清洗 去除 选择性 H2O2 OH DI 图形
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Enabling Solution Growth of Insoluble Organic Materials in Common Solvents
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作者 Masaaki Yokota Kota Fujii +3 位作者 Makoto Ishigo Kuniaki Sasaki Hitoshi Kato Norihito Doki 《Advances in Chemical Engineering and Science》 2016年第2期82-86,共5页
Copper phthalocyanine (CuPc) amorphous film was successfully deposited on a silicone substrate by physical vapor deposition. When the film was in contact with a common solvent such as aniline, 1-propanol and toluene, ... Copper phthalocyanine (CuPc) amorphous film was successfully deposited on a silicone substrate by physical vapor deposition. When the film was in contact with a common solvent such as aniline, 1-propanol and toluene, the CuPc solid film was partially dissolved followed by nucleation and crystal growth in the solution. Based on these experimental results, we propose a novel method for preparation of the organic thin film by combination of dry and wet processes. 展开更多
关键词 CRYSTALLIZATION AMORPHOUS Copper Phthalocyanine Organic Thin Film
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