The optical properties of the type-Ⅱ lineup InxAl1-xN-Al0.59Ga0.41N/Al0.74Ga0.26N quantum well(QW) structures with different In contents are investigated by using the six-by-six K-P method.The type-Ⅱ lineup structur...The optical properties of the type-Ⅱ lineup InxAl1-xN-Al0.59Ga0.41N/Al0.74Ga0.26N quantum well(QW) structures with different In contents are investigated by using the six-by-six K-P method.The type-Ⅱ lineup structures exhibit the larger product of Fermi-Dirac distribution functions of electron fc^n and hole(1-fv^Um) and the approximately equal transverse electric(TE) polarization optical matrix elements(|Mx|^2) for the c1-v1 transition.As a result, the peak intensity in the TE polarization spontaneous emission spectrum is improved by 47.45%-53.84% as compared to that of the conventional AlGaN QW structure.In addition, the type-Ⅱ QW structure with x^0.17 has the largest TE mode peak intensity in the investigated In-content range of 0.13-0.23.It can be attributed to the combined effect of |Mx|^2 and fc^n(1-fv^Um) for the c1-v1, c1-v2, and c1-v3 transitions.展开更多
Plasmonic nanolaser as a new type of ultra-small laser,has gain wide interests due to its breaking diffraction limit of light and fast carrier dynamics characters.Normally,the main problem that need to be solved for p...Plasmonic nanolaser as a new type of ultra-small laser,has gain wide interests due to its breaking diffraction limit of light and fast carrier dynamics characters.Normally,the main problem that need to be solved for plasmonic nanolaser is high loss induced by optical and ohmic losses,which leads to the low quality factor.In this work,InGaN/GaN nanoplate plasmonic nanolaser with large interface area were designed and fabricated,where the overlap between SPs and excitons can be enhanced.The lasing threshold is calculated to be~6.36 kW/cm^(2),where the full width at half maximum(FWHM)drops from 27 to 4 nm.And the fast decay time at 502 nm(sharp peak of stimulated lasing)is estimated to be 0.42 ns.Enhanced lasing characters are mainly attributed to the strong confinement of electromagnetic wave in the low refractive index material,which improve the near field coupling between SPs and excitons.Such plasmonic laser should be useful in data storage applications,biological application,light communication,especially for optoelectronic devices integrated into a system on a chip.展开更多
基金Project supported by the Talent Introduction Project of Nantong University,China(Grant No.03081055)the National Natural Science Foundation of China(Grant Nos.61874168 and 61505090)+4 种基金Top-notch Academic Programs Project of Jiangsu Higher Education Institutions,China(Grant No.PPZY2015B135)the Six Top Talents of Jiangsu Province,China(Grant No.2016-XCL-052)the Natural Science Foundation of Nantong University,China(Grant Nos.03080666and 14Z003)the Qing Lan Project of Jiangsu Province,ChinaKey NSF Program of Jiangsu Provincial Department of Education,China(Grant No.15KJA510004)
文摘The optical properties of the type-Ⅱ lineup InxAl1-xN-Al0.59Ga0.41N/Al0.74Ga0.26N quantum well(QW) structures with different In contents are investigated by using the six-by-six K-P method.The type-Ⅱ lineup structures exhibit the larger product of Fermi-Dirac distribution functions of electron fc^n and hole(1-fv^Um) and the approximately equal transverse electric(TE) polarization optical matrix elements(|Mx|^2) for the c1-v1 transition.As a result, the peak intensity in the TE polarization spontaneous emission spectrum is improved by 47.45%-53.84% as compared to that of the conventional AlGaN QW structure.In addition, the type-Ⅱ QW structure with x^0.17 has the largest TE mode peak intensity in the investigated In-content range of 0.13-0.23.It can be attributed to the combined effect of |Mx|^2 and fc^n(1-fv^Um) for the c1-v1, c1-v2, and c1-v3 transitions.
基金support from the National Natural Science Foundation of China(62004104,61974062,61921005)the Nature Science Foundation of Jiangsu Province(BK20180747,BE2015111)the Solid State Lighting and Energy-saving Electronics Collaborative Innovation Center,and Research Funds from NJU-Yangzhou Institute of Opto-electronics.
文摘Plasmonic nanolaser as a new type of ultra-small laser,has gain wide interests due to its breaking diffraction limit of light and fast carrier dynamics characters.Normally,the main problem that need to be solved for plasmonic nanolaser is high loss induced by optical and ohmic losses,which leads to the low quality factor.In this work,InGaN/GaN nanoplate plasmonic nanolaser with large interface area were designed and fabricated,where the overlap between SPs and excitons can be enhanced.The lasing threshold is calculated to be~6.36 kW/cm^(2),where the full width at half maximum(FWHM)drops from 27 to 4 nm.And the fast decay time at 502 nm(sharp peak of stimulated lasing)is estimated to be 0.42 ns.Enhanced lasing characters are mainly attributed to the strong confinement of electromagnetic wave in the low refractive index material,which improve the near field coupling between SPs and excitons.Such plasmonic laser should be useful in data storage applications,biological application,light communication,especially for optoelectronic devices integrated into a system on a chip.
