In this work, we study how an epitaxial laser-like(or superluminescent diode-like) structure is modified by intentional changes of the substrate misorientation in the range of 0.5°–2.6°. The 40 μm × ...In this work, we study how an epitaxial laser-like(or superluminescent diode-like) structure is modified by intentional changes of the substrate misorientation in the range of 0.5°–2.6°. The 40 μm × 40 μm test structure with misorientation profiling was fabricated using multilevel photolithography and dry-etching. The local structural parameters were measured by synchrotron radiation microbeam X-ray diffraction, with the sampling area of below 1 μm × 1 μm. We directly obtained the relation between the misorientation and indium content in the quantum well, changing from 9% to 18%, with a high resolution(small misorientation step). We also show a good agreement of local photoluminescence emission wavelength with simulation of transition energy based on synchrotron radiation microbeam X-ray diffraction(SR-XRD) data and estimated Stokes shift. We observe that the substrate misorientation influences also the In Ga N waveguide and Al Ga N cladding composition. Still, we showed through simulation of the optical confinement factor of a full laser diode structure that good light guiding properties should be preserved in the whole misorientation range studied here. This proves the usefulness of misorientation modification in applications like broadband superluminescent diodes or multicolor laser arrays.展开更多
We demonstrate InGaN violet light-emitting superluminescent diodes with large spectral width suitable for applications in optical coherence spectroscopy.This was achieved using the concept of nonlinear indium content ...We demonstrate InGaN violet light-emitting superluminescent diodes with large spectral width suitable for applications in optical coherence spectroscopy.This was achieved using the concept of nonlinear indium content profile along the superluminescent diode waveguide.A specially designed 3D substrate surface shape leads to a step-like indium content profile,with the indium concentration in the InGaN/GaN quantum wells ranging approximately between 6% and 10%.Thanks to this approach,we were able to increase the width of the spectrum in processed devices from 2.6 nm(reference diode)to 15.5 nm.展开更多
基金Japan Society for the Promotion of Science(JP15H05732, JP16H02332, JP16H06426)Fundacja na rzecz Nauki Polskiej (TEAM TECH/2017-4/24)。
文摘In this work, we study how an epitaxial laser-like(or superluminescent diode-like) structure is modified by intentional changes of the substrate misorientation in the range of 0.5°–2.6°. The 40 μm × 40 μm test structure with misorientation profiling was fabricated using multilevel photolithography and dry-etching. The local structural parameters were measured by synchrotron radiation microbeam X-ray diffraction, with the sampling area of below 1 μm × 1 μm. We directly obtained the relation between the misorientation and indium content in the quantum well, changing from 9% to 18%, with a high resolution(small misorientation step). We also show a good agreement of local photoluminescence emission wavelength with simulation of transition energy based on synchrotron radiation microbeam X-ray diffraction(SR-XRD) data and estimated Stokes shift. We observe that the substrate misorientation influences also the In Ga N waveguide and Al Ga N cladding composition. Still, we showed through simulation of the optical confinement factor of a full laser diode structure that good light guiding properties should be preserved in the whole misorientation range studied here. This proves the usefulness of misorientation modification in applications like broadband superluminescent diodes or multicolor laser arrays.
基金Narodowe Centrum Nauki(NCN)(2014/15/B/ST3/04252)Narodowe Centrum Badan'i Rozwoju(NCBR)(1/POLBER-1/2014)
文摘We demonstrate InGaN violet light-emitting superluminescent diodes with large spectral width suitable for applications in optical coherence spectroscopy.This was achieved using the concept of nonlinear indium content profile along the superluminescent diode waveguide.A specially designed 3D substrate surface shape leads to a step-like indium content profile,with the indium concentration in the InGaN/GaN quantum wells ranging approximately between 6% and 10%.Thanks to this approach,we were able to increase the width of the spectrum in processed devices from 2.6 nm(reference diode)to 15.5 nm.
