InGaN quantum dot is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still not mature, especially the growth by me...InGaN quantum dot is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still not mature, especially the growth by metal--organic- vapor phase epitaxy （MOVPE）, which is challenge due to the lack of, itin-situ monitoring tool. In this paper, we reviewed the development of InGaN quantum dot growth by MOVPE, including our work on growth of near-UV, green, and red InGaN quantum dots. In addition, we also introduced the applications of InGaN quantum dots on visible light emitting diodes.展开更多
We propose and demonstrate to derive the Auger recombination coefficient by fitting efficiency-current and carrier lifetime-current curves simultaneously, which can minimize the uncertainty of fitting results. The obt...We propose and demonstrate to derive the Auger recombination coefficient by fitting efficiency-current and carrier lifetime-current curves simultaneously, which can minimize the uncertainty of fitting results. The obtained Auger recombination coefficient is 1.0x10(-31) cm(6)s(-1) in the present sample, which contributes slightly to efficiency droop effect.展开更多
The wavelength-dependent and frequency-dependent dielectric function of wurtzite-GaN is cMculated totally from fundamental parameters such as the lattice constant using Waiter＇s ab initio model. The errors occurring ...The wavelength-dependent and frequency-dependent dielectric function of wurtzite-GaN is cMculated totally from fundamental parameters such as the lattice constant using Waiter＇s ab initio model. The errors occurring in the cMculation are carefully reduced by/inear interpolation of energy data. The Kramers-Kronig transform of the real part of greater range is obtained by extrapolation of the reM part. The calculation is time-consuming but meaningful The long-wave results are similar to the experimental data of the photon and are useful for related investigation of properties of wide-gap semiconductors such as electron scattering like the Auger recombination and impact ionization.展开更多
基金Project supported by the National Basic Research Program of China(Grant Nos.2013CB632804,2011CB301900,and 2012CB3155605)the National Natural Science Foundation of China(Grant Nos.61176015,61210014,51002085,61321004,61307024,and 61176059)the High Technology Research and Development Program of China(Grant No.2012AA050601)
文摘InGaN quantum dot is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still not mature, especially the growth by metal--organic- vapor phase epitaxy （MOVPE）, which is challenge due to the lack of, itin-situ monitoring tool. In this paper, we reviewed the development of InGaN quantum dot growth by MOVPE, including our work on growth of near-UV, green, and red InGaN quantum dots. In addition, we also introduced the applications of InGaN quantum dots on visible light emitting diodes.
基金Supported by the National Key Research and Development Program of China under Grant No 2016YFB0400102the National Basic Research Program of China under Grant Nos 2012CB3155605,2013CB632804,2014CB340002 and 2015CB351900+6 种基金the National Natural Science Foundation of China under Grant Nos 61574082,61210014,61321004,61307024,and 51561165012the High-Technology Research and Development Program of China under Grant No 2015AA017101the Tsinghua University Initiative Scientific Research Program under Grant Nos 2013023Z09N and 2015THZ02-3the Open Fund of the State Key Laboratory on Integrated Optoelectronics under Grant No IOSKL2015KF10the CAEP Microsystem and THz Science and Technology Foundation under Grant No CAEPMT201505the Science Challenge Project under Grant No JCKY2016212A503the Guangdong Province Science and Technology Program under Grant No 2014B010121004
文摘We propose and demonstrate to derive the Auger recombination coefficient by fitting efficiency-current and carrier lifetime-current curves simultaneously, which can minimize the uncertainty of fitting results. The obtained Auger recombination coefficient is 1.0x10(-31) cm(6)s(-1) in the present sample, which contributes slightly to efficiency droop effect.
基金Supported by the National Key Research and Development Program of China under Grant No 2016YFB0400102the National Basic Research Program of China under Grant Nos 2012CB3155605,2013CB632804,2014CB340002 and 2015CB351900+7 种基金the National Natural Science Foundation of China under Grant Nos 61574082,61210014,61321004,61307024 and 51561165012the High Technology Research and Development Program of China under Grant No 2015AA017101the Tsinghua University Student Research Training Projects under Grant No 1611T0157the Tsinghua University Initiative Scientific Research Program under Grant Nos 2013023Z09N and 2015THZ02-3the Open Fund of the State Key Laboratory on Integrated Optoelectronics under Grant No IOSKL2015KF10the CAEP Microsystem and THz Science and Technology Foundation under Grant No CAEPMT201505the Science Challenge Project under Grant No JCKY2016212A503the Guangdong Province Science and Technology Program under Grant No 2014B010121004
文摘The wavelength-dependent and frequency-dependent dielectric function of wurtzite-GaN is cMculated totally from fundamental parameters such as the lattice constant using Waiter＇s ab initio model. The errors occurring in the cMculation are carefully reduced by/inear interpolation of energy data. The Kramers-Kronig transform of the real part of greater range is obtained by extrapolation of the reM part. The calculation is time-consuming but meaningful The long-wave results are similar to the experimental data of the photon and are useful for related investigation of properties of wide-gap semiconductors such as electron scattering like the Auger recombination and impact ionization.
