A novel technique using a keeper with a simultaneous low supply voltage and low body voltage is proposed to improve the overall performance of high fan-in OR gates without modifying the physical dimensions of the keep...A novel technique using a keeper with a simultaneous low supply voltage and low body voltage is proposed to improve the overall performance of high fan-in OR gates without modifying the physical dimensions of the keeper.Simulation results of a 16-input domino OR gate using 45 nm CMOS technology show that the proposed technique could trade off between a high power/speed efficient operation and the robustness to noise effectively.Also,a Monte Carlo analysis indicates that the proposed domino OR gate is more robust to parameter variation compared to a conventional domino OR gate.展开更多
基金supported by the 2008 Scienceand Research Foundation of Hebei Education Department (No.2008308)
文摘A novel technique using a keeper with a simultaneous low supply voltage and low body voltage is proposed to improve the overall performance of high fan-in OR gates without modifying the physical dimensions of the keeper.Simulation results of a 16-input domino OR gate using 45 nm CMOS technology show that the proposed technique could trade off between a high power/speed efficient operation and the robustness to noise effectively.Also,a Monte Carlo analysis indicates that the proposed domino OR gate is more robust to parameter variation compared to a conventional domino OR gate.
