InGaN/GaN micro-light-emitting diodes(micro-LEDs)with a metal–insulator-semiconductor(MIS)structure on the sidewall are proposed to improve efficiency.In this MIS structure,a sidewall electrode is deposited on the in...InGaN/GaN micro-light-emitting diodes(micro-LEDs)with a metal–insulator-semiconductor(MIS)structure on the sidewall are proposed to improve efficiency.In this MIS structure,a sidewall electrode is deposited on the insulating layer-coated sidewall of the device mesa between a cathode on the bottom and an anode on the top.Electroluminescence(EL)measurements of fabricated devices with a mesa diameter of 10μm show that the application of negative biases on the sidewall electrode can increase the device external quantum efficiency(EQE).In contrast,the application of positive biases can decrease the EQE.The band structure analysis reveals that the EQE is impacted because the application of sidewall electric fields manipulates the local surface electron density along the mesa sidewall and thus controls surface Shockley–Read–Hall(SRH)recombination.Two suggested strategies,reducing insulator layer thickness and exploring alternative materials,can be implemented to further improve the EQE of MIS micro-LEDs in future fabrication.展开更多
Open Access This article is licensed under a Creative Commons Attribution 4.0 International License,which permits use,sharing,adaptation,distribution and reproduction in any medium or format,as long as you give approp...Open Access This article is licensed under a Creative Commons Attribution 4.0 International License,which permits use,sharing,adaptation,distribution and reproduction in any medium or format,as long as you give appropriate credit to the original author(s)and the source,provide a link to the Creative Commons licence,and indicate if changes were made.The images or other third party material in this article are included in the article’s Creative Commons licence.展开更多
基金supported by the Natural Sciences and Engineering Research Council of Canada(NSERC),Ontario Centres for Excellence(OCE),Canada,and Canada Foundation of Innovation(CFI),the University of Waterloo.
文摘InGaN/GaN micro-light-emitting diodes(micro-LEDs)with a metal–insulator-semiconductor(MIS)structure on the sidewall are proposed to improve efficiency.In this MIS structure,a sidewall electrode is deposited on the insulating layer-coated sidewall of the device mesa between a cathode on the bottom and an anode on the top.Electroluminescence(EL)measurements of fabricated devices with a mesa diameter of 10μm show that the application of negative biases on the sidewall electrode can increase the device external quantum efficiency(EQE).In contrast,the application of positive biases can decrease the EQE.The band structure analysis reveals that the EQE is impacted because the application of sidewall electric fields manipulates the local surface electron density along the mesa sidewall and thus controls surface Shockley–Read–Hall(SRH)recombination.Two suggested strategies,reducing insulator layer thickness and exploring alternative materials,can be implemented to further improve the EQE of MIS micro-LEDs in future fabrication.
文摘Open Access This article is licensed under a Creative Commons Attribution 4.0 International License,which permits use,sharing,adaptation,distribution and reproduction in any medium or format,as long as you give appropriate credit to the original author(s)and the source,provide a link to the Creative Commons licence,and indicate if changes were made.The images or other third party material in this article are included in the article’s Creative Commons licence.
