Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range

The behavior of Schottky contacts in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated by temperature-dependent current-voltage （T-I-V） measurements from 300 K to 473 K. The ideality factor and barrier height determined based on the thermionic emission （TE） theory are found to be strong functions of temperature, while present a great deviation from the theoretical value, which can be expounded by the barrier height inhomogeneities. In order to determine the forward current transport mechanisms, the experimental data are analyzed using numerical fitting method, considering the temperature-dependent series resistance. It is observed that the current flow at room temperature can be attributed to the tunneling mechanism, while thermionic emission current gains a growing proportion with an increase in temperature. Finally, the effective barrier height is derived based on the extracted thermionic emission component, and an evaluation of the density of dislocations is made from the I-V characteristics, giving a value of 1.49 × 10^7 cm^-2.

肖特基结多数载流子积累新型绝缘栅双极晶体管

绝缘栅双极晶体管(insulated gate bipolar transistor,IGBT)是现代功率半导体器件的核心,因其良好的电学特性得到了广泛的应用.本文提出了一种具有肖特基结接触的栅半导体层新型多数载流子积累模式IGBT,并对其进行特性研究和仿真分析.当新型IGBT处于导通状态,栅极施加正向偏压,由于肖特基势垒二极管极低的正向导通压降,使得栅半导体层的电压几乎等于栅极电压,从而能够在漂移区中积累大量的多数载流子电子.除了现有的电子外,这些积累的电子增大了漂移区的电导率,从而显著降低了正向导通压降.因此,打破了传统IGBT正向导通压降受漂移区掺杂浓度的限制.轻掺杂的漂移区可以使新型IGBT具有较高的击穿电压,同时减小了关断过程中器件内部耗尽层电容,因此整体米勒电容减小,提升了关断速度,减小了关断时间和关断损耗.分析结果表明,600 V级别的击穿电压时,新型IGBT的正向导通压降,关断损耗和关断时间相比常规IGBT分别降低了46.2%,52.5%,30%,打破了IGBT中正向导通压降和关断损耗之间的矛盾.此外,新型IGBT具有更高的抗闩锁能力和更大的正偏安全工作区.新型结构的提出满足了未来IGBT器件性能的发展要求,对于功率半导体器件领域具有重大指导意义.

基于高阶幂的单快拍LDACS系统波达方向估计

L波段数字航空通信系统(L band digital aeronautical communication system,LDACS)是未来航空宽带通信重要的基础设施之一,针对LDACS信号容易受到相邻波道大功率测距仪(distance measuring equipment,DME)信号干扰的问题,提出了联合正交投影干扰抑制与单快拍稀疏分解的波达方向(direction of arrival,DOA)估计方法。通过子空间投影抑制DME干扰,然后使用单快拍数据构建伪协方差矩阵,对伪协方差矩阵求高阶幂,之后进行奇异值分解,并利用约束条件求解稀疏解得到期望信号来向的估计值。所提方法使用高阶伪协方差矩阵降低了噪声影响,仅用单快拍就可以准确估计LDACS信号的入射方向。仿真结果表明,改进单快拍高级幂(improved single snapshot high order power,ISS-HOP)L1-SVD算法的估计精度优于ISS-HOP-MUSIC算法。该方法可以有效抑制DME干扰,提高OFDM接收机性能。

4H-SiC CMOS高温集成电路设计与制造

设计、制造并测试了基于碳化硅材料的横向MOSFET器件和CMOS电路。常温时,N型和P型MOSFET在片测试的阈值电压分别约为5.4 V和-6.3 V;温度达到300℃时,N型和P型MOSFET的阈值电压分别为4.3 V和-5.3 V。由N型和P型MOSFET组成的CMOS反相器在常温下输出的上升时间为1.44μs,下降时间为2.17μs,且在300℃高温条件下仍可正常工作。由CMOS反相器级联成的环形振荡器在常温下的测试工作频率为147 kHz,在高温下也可正常工作。

板管型降膜式蒸发器换热特性数值模拟

降膜式蒸发器兼有满液式蒸发器换热效果好及干式蒸发器制冷剂充灌量小的特点。对板管型降膜式蒸发器进行了数值模拟,得出了其在使用R410A为制冷工质时,条缝宽度、喷淋密度及板面温度对蒸发器换热性能的影响。结果表明,当工质入口条缝宽度为1.5mm时,板面的液膜覆盖率及换热系数最大,条缝宽度小于或大于1.5mm时,板面的液膜覆盖率及换热系数均有所降低;板面的液膜覆盖率及其换热系数随着液膜雷诺数的增加而增加,但当液膜雷诺数达到10000以上时,增加幅度明显减小并趋于零;板片温度升高可以增强蒸发器的换热性能,但雷诺数较小时的影响很小,只有雷诺数足够大时板片温度的影响才得到明显的体现。

A high gain wide dynamic range transimpedance amplifier for optical receivers

As the front-end preamplifiers in optical receivers, transimpedance amplifiers （TIAs） are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time, the TIAs should possess a wide dynamic range （DR） to prevent the circuit from becoming saturated by high input currents. Based on the above, this paper presents a CMOS transimpedance amplifier with high gain and a wide DR for 2.5 Gbit/s communications. The TIA proposed consists of a three-stage cascade pull push inverter, an automatic gain control circuit, and a shunt transistor controlled by the resistive divider. The inductive-series peaking technique is used to further extend the bandwidth. The TIA proposed displays a maximum transimpedance gain of 88.3 dBΩ with the -3 dB bandwidth of 1.8 GHz, exhibits an input current dynamic range from 100 nA to 10 mA. The output voltage noise is less than 48.23 nV/√Hz within the -3 dB bandwidth. The circuit is fabricated using an SMIC 0.18 μm 1P6M RFCMOS process and dissipates a dc power of 9.4 mW with 1.8 V supply voltage.

A Ku-band wide-tuning-range high-output-power VCO in InGaP/GaAs HBT technology

A fully integrated Ku-band voltage controlled oscillator （VCO） is presented in an InGaP/GaAs hetero- junction bipolar transistor （HBT） technology. To achieve the wide tuning range （TR）, the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to 6.46 dBm, and a phase noise of -94.9 dBc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO con- sumes 52.75 mW from 5 V supply and occupies an area of 0.81 × 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.

Physical mechanism of oxygen diffusion in the formation of Ga_(2)O_(3) Ohmic contacts

The formation of low-resistance Ohmic contacts in Ga_(2)O_(3) is crucial for high-performance electronic devices. Conventionally, a titanium/gold(Ti/Au) electrode is rapidly annealed to achieve Ohmic contacts, resulting in mutual diffusion of atoms at the interface. However, the specific role of diffusing elements in Ohmic contact formation remains unclear.In this work, we investigate the contribution of oxygen atom diffusion to the formation of Ohmic contacts in Ga_(2)O_(3). We prepare a Ti/Au electrode on a single crystal substrate and conduct a series of electrical and structural characterizations.Using density functional theory, we construct a model of the interface and calculate the charge density, partial density of states, planar electrostatic potential energy, and I–V characteristics. Our results demonstrate that the oxygen atom diffusion effectively reduces the interface barrier, leading to low-resistance Ohmic contacts in Ga_(2)O_(3). These findings provide valuable insights into the underlying mechanisms of Ohmic contact formation and highlight the importance of considering the oxygen atom diffusion in the design of Ga_(2)O_(3)-based electronic devices.

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

双金属板材异步轧制复合轧后层厚建模与分析

根据双层金属复合板材同径异速异步轧制复合问题,利用流函数法和上界法建立了异步轧制轧后层厚的数学计算模型。进行异步轧制有限元模拟,将有限元模拟结果与理论结果进行对比,所建立的理论模型误差范围为2.55%~4.17%。该模型不仅可以快速计算轧后复合板的层厚比,在单一工况下,还能快速掌握不同工艺参数(压下量、初始板厚、异速比、层厚比)对轧后层厚比的影响规律,对设置和优化生产工艺提供了重要参考。

全TOPCon电池正面多晶硅层硼掺杂工艺

为提升隧穿氧化层钝化接触(TOPCon)电池光电转换效率,本文通过高温扩散在n型TOPCon电池正面制作p型隧穿氧化层钝化接触结构,提升发射极钝化性能,减少正面金属复合。本文研究了不同沉积时间、推进温度、推进时间等工艺参数对实验样品钝化性能及掺杂曲线的影响。实验结果表明,当沉积时间为1500 s,推进温度为920℃,推进时间为20 min时,掺硼多晶硅层可获得较优的钝化性能及掺杂浓度,其中样品多晶硅层硼掺杂浓度达到1.40×10^(20)cm^(-3),隐开路电压(iV_(oc))大于720.0 mV。依据该参数制备的TOPCon电池光电转换效率可达23.89%,对应的短路电流密度为39.36 mA/cm^(2),开路电压(V_(oc))达到726.4 mV,填充因子(FF)为83.54%。

一种全流程生态环保植物染面料的产品开发

探讨了一种全流程生态环保植物染面料的设计思路及生产关键要点。优选天然纤维材质,在坯布生产加工中选用接枝淀粉上浆,染整加工中采用生物酶和茶皂素生物助剂前处理、天然植物染料染色和空气洗柔软整理,获得全流程生态植物染成品面料。测试了面料色牢度和化学类物质,检测结果均达到标准。与常规柔软剂整理相比,采用空气洗柔软整理的织物反弹率和悬垂性均较优。

Dual-Schottky-junctions coupling device based on ultra-longβ-Ga_(2)O_(3)single-crystal nanobelt and its photoelectric properties

High qualityβ-Ga_(2)O_(3)single crystal nanobelts with length of 2−3 mm and width from tens of microns to 132μm were synthesized by carbothermal reduction method.Based on the grown nanobelt with the length of 600μm,the dual-Schottky-junctions coupling device(DSCD)was fabricated.Due to the electrically floating Ga_(2)O_(3)nanobelt region coupling with the double Schottky-junctions,the current I_(S2)increases firstly and rapidly reaches into saturation as increase the voltage V_(S2).The saturation current is about 10 pA,which is two orders of magnitude lower than that of a single Schottky-junction.In the case of solar-blind ultraviolet(UV)light irradiation,the photogenerated electrons further aggravate the coupling physical mechanism in device.I_(S2)increases as the intensity of UV light increases.Under the UV light of 1820μW/cm^(2),I_(S2)quickly enters the saturation state.At V_(S2)=10 V,photo-to-dark current ratio(PDCR)of the device reaches more than 104,the external quantum efficiency(EQE)is 1.6×10^(3)%,and the detectivity(D*)is 7.5×10^(12)Jones.In addition,the device has a very short rise and decay times of 25−54 ms under different positive and negative bias.DSCD shows unique electrical and optical control characteristics,which will open a new way for the application of nanobelt-based devices.

超低温压力容器用9Ni钢的冶炼生产实践

介绍了某钢厂采用120 t转炉→LF炉→扒渣/捞渣→LF炉→VD炉→板坯连铸工艺生产超低温压力容器用9Ni钢的冶炼实践情况,采用转炉+LF炉脱碳脱磷工艺,控制转炉出钢w[P]≤0.009%、w[C]≤0.05%,炉后平均脱P率74.3%,平均脱碳率51.2%,生产过程中,P的控制难度相比C的控制难度大。采用扒渣工艺下钢水的平均返磷率为16.89%,而捞渣工艺下钢水的平均返磷率为22.61%,扒渣工艺下钢水的返磷率低,但生产节奏长15~20 min,钢水量损失平均增加3.1 t/炉。镍板由转炉废钢槽加入调整为全部由LF炉加入后,Ni平均收得率提高了3.74%。通过对生产工艺的优化,中间包钢水P、S、N、T. O、C满足内控要求,钢水纯净度高,铸坯低倍中心偏析达到C类1.0~1.5级,表面质量良好,轧制钢板在-196℃下性能优良。

国产6.5 kV/400 A SiC MOSFET模块研制及电气特性研究

为满足当前新型电力系统中电能变换装备对器件高压、大容量、工作频率高、开关损耗低的需求,文中自主研制一款国内最高功率等级的6.5 kV/400 A碳化硅金属-氧化物-半导体场效应晶体管(metal-oxide-semiconductor field effect transistor,MOSFET)模块,并对其电气特性开展研究。首先,对模块的电路与封装结构进行设计,通过热仿真和阻抗测量手段,对所研制模块的热特性以及回路寄生参数进行分析;其次,对所研制的模块开展常温(25℃)及高温(150℃)下的静态、动态特性测量。测量结果表明,在常温、高温条件下,模块的阻断漏电流与栅源极漏电流微小,且开关损耗维持一致,具备较好的耐高温特性。同时,相较于同电压电流规格的硅绝缘栅双极型晶体管器件,模块开关损耗可降低72%以上。最后,搭建碳化硅器件连续运行工况实验平台,模拟器件在换流装备中的实际运行工况,对模块进行半桥正弦脉宽调制逆变连续运行实验。连续运行实验结果表明,该模块在电压3600 V、器件电流峰值280 A条件下连续运行1h无异常,初步验证模块具备工程应用能力。研究可为高压碳化硅MOSFET的研制及工程应用提供一定支撑。

Development trends of GaN-based wide bandgap semiconductors： from solid state lighting to power electronic devices

1 Introduction Ⅲ-nitride wide bandgap semiconductors, such as GaN, InN, AIN and their ternary or quaternary alloy components, are wholly-component direct band gap materials with a full adjustable band gap （0.63-6.2eV）, strong polarization, high temperature resistant, anti-radiation, and can be achieved with low-dimensional quantum structures. Furthermore, it is the only one semiconductor material system that covers ultraviolet to infrared wavelength band. Therefore, a lot of attention has been paid to them. Through unremitting efforts, blue-green light-emitting diodes （LEDs） based on InGaN/GaN quantum well materials with low in composition have been developed and successfully industrialized. Their applications in the fields of the solid-state lighting and flat-panel displays are profoundly changing people＇s lives. In addition, high power electron mobility transistor devices （HEMT） based on low A1 content AIGaN/GaN heterostructure have significant applications in the fields of X-band radar and civilian communications~ which is profoundly affecting the national security situation and the world＇s strategic pattern.

航空器爬升与下降阶段4D航迹预测

准确的4D航迹预测可以在冲突探测与解脱、航迹优化和空中交通流量管理等多个领域发挥重要作用。为提高预测的准确性,提出了基于机器学习的航空器4D航迹预测方法。首先,利用爬升阶段提取研究指标,构建循环神经网络(recurrent neural network,RNN)和长短期记忆网络(long short-term memory,LSTM);其次,在下降阶段进行数据维度拓展,构建RNN、LSTM模型进行航迹预测;最后,对各个维度上的预测航迹点和实际航迹点的误差进行分析。仿真结果表明,爬升阶段模型和下降阶段模型对于航空器位置预测准确性高,展现了航迹预测模型的良好鲁棒性。

重离子引起SiC MOSFET栅氧化物潜在损伤研究

针对空间应用,开展SiC MOSFET单粒子效应试验研究。在加速器上用重离子辐照1200 V SiC MOSFET,离子线性能量传输(LET)在0.26~118 MeV·cm^(2)/mg之间,辐照中被试器件加50~600 V静态漏源偏置电压、栅源短接,实时测量电特性,进行辐照后栅应力(PIGS)测试。试验结果发现,50~100 V偏置电压下,离子引起瞬态电流,PIGS测试栅失效。分析认为离子引起栅氧化物潜在损伤,PIGS测试过程中,潜在损伤进一步退化导致栅失效。氧化物潜在损伤不仅与辐照偏置电压有关,还与入射离子LET和注量有关。PIGS测试需要的栅应力时间与潜在损伤程度有关,可超过300 s。并给出了电荷累积损伤模型。模型进行SiC MOSFET单粒子效应评估时,应考虑离子引起栅氧化物潜在损伤的影响,需根据轨道和任务周期确定试验离子注量,根据应用情况确定辐照偏置电压,并评估确定PIGS测试栅应力时间。

基于国产单晶衬底的150 mm 4H-SiC同质外延技术进展

高阻断电压、大功率密度、高转化效率是电力电子器件技术持续追求的目标,基于4H-SiC优异的材料特性,在电力电子器件应用方面具有广阔的发展前景。围绕SiC MOSFET器件对外延材料的需求,介绍了国内外主流的SiC外延设备及国产SiC衬底的发展,并重点介绍了宽禁带半导体电力电子器件国家重点实验室在国产150 mm(6英寸)SiC衬底上的高速外延技术进展。通过关键技术攻关,实现了150 mm SiC外延材料表面缺陷密度≤0.5 cm-2,BPD缺陷密度≤0.1 cm-2,片内掺杂浓度不均匀性≤5%,片内厚度不均匀性≤1%。基于自主外延材料,实现了650~1200 V SiC MOSFET产品商业化以及6.5~15 kV高压SiC MOSFET器件的产品定型。

Si衬底上外延生长GaN基射频电子材料的研究进展

Si衬底因兼具大尺寸、低成本以及与现有CMOS工艺兼容等优势,使Si衬底上GaN基射频(RF)电子材料和器件成为继功率电子器件之后下一个该领域关注的焦点。由于力学性质与低阻Si衬底不同,高阻Si衬底上GaN基外延材料生长的应力控制和位错抑制问题仍然困难,且严重的射频损耗问题限制着其在射频电子领域的应用。本文简要介绍了Si衬底上GaN基射频电子材料的研究现状和面临的挑战,重点介绍了北京大学研究团队在高阻Si衬底上GaN基材料射频损耗的产生机理,以及低位错密度、低射频损耗GaN的外延生长等方面的主要研究进展。最后对Si衬底上GaN基射频电子材料和器件的未来发展作了展望。