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Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition
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作者 许晟瑞 周小伟 +6 位作者 郝跃 毛维 张进城 张忠芬 白琳 张金凤 李志明 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第11期14-16,共3页
Nonpolar (1120) a-plane GaN films have been grown by low-pressure metal-organic vapor deposition on r-plane (1102) sapphire substrate. The structural and electrical properties of the a-plane GaN films are investig... Nonpolar (1120) a-plane GaN films have been grown by low-pressure metal-organic vapor deposition on r-plane (1102) sapphire substrate. The structural and electrical properties of the a-plane GaN films are investigated by high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and van der Pauw Hall measurement. It is found that the Hall voltage shows more anisotropy than that of the c-plane samples; furthermore, the mobility changes with the degree of the van der Pauw square diagonal to the c direction, which shows significant electrical anisotropy. Further research indicates that electron mobility is strongly influenced by edge dislocations. 展开更多
关键词 GAN ANISOTROPIC HRXRD NONPOLAR
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