Low Voltage Differential Signaling (LVDS) has become a popular choice for high-speed serial links to conquer the bandwidth bottleneck of intra-chip data transmission. This paper presents the design and the implementat...Low Voltage Differential Signaling (LVDS) has become a popular choice for high-speed serial links to conquer the bandwidth bottleneck of intra-chip data transmission. This paper presents the design and the implementation of LVDS Input/Output (I/O) interface circuits in a standard 0.18 μm CMOS technology using thick gate oxide devices (3.3 V), fully compatible with LVDS standard. In the proposed transmitter, a novel Common-Mode FeedBack (CMFB)circuit is utilized to keep the common-mode output voltage stable over Process, supply Voltage and Temperature (PVT) variations. Because there are no area greedy resistors in the CMFB circuitry, the disadvantage of large die area in existing transmitter structures is avoided. To obtain sufficient gain, the receiver consists of three am- plifying stages: a voltage amplifying stage, a transconductance amplifying stage, and a transimpedance amplifying stage. And to exclude inner nodes with high RC time constant, shunt-shunt negative feedback is introduced in the receiver. A novel active inductor shunt peaking structure is used in the receiver to fulfill the stringent requirements of high speed and wide Common-Mode Input Region (CMIR) without voltage gain, power dissipation and silicon area penalty. Simulation results show that data rates of 2 Gbps and 2.5 Gbps are achieved for the transmitter and receiver with power con- sumption of 13.2 mW and 8.3 mW respectively.展开更多
A novel structure for a charge pump circuit is proposed, in which the charge-pump （CP） current can adaptively regulated according to phase-locked loops （PLL） frequency synthesis demand. The current follow technolo...A novel structure for a charge pump circuit is proposed, in which the charge-pump （CP） current can adaptively regulated according to phase-locked loops （PLL） frequency synthesis demand. The current follow technology is used to make perfect current matching characteristics, and the two differential inverters are implanted to increase the speed of charge pump and decrease output spur due to theory of low voltage difference signal. Simulation results, with 1st silicon 0. 25μm 2. 5 V complementary metal-oxide-semiconductor （CMOS） mixed-signal process, show the good current matching characteristics regardless of the charge pump output voltages.展开更多
A 3.5 times PLL clock frequency multiplier for low voltage different signal （LVDS） driver is presented. A novel adaptive charge pump can automatically switch the loop bandwidth and a voltage-controlled oscillator （...A 3.5 times PLL clock frequency multiplier for low voltage different signal （LVDS） driver is presented. A novel adaptive charge pump can automatically switch the loop bandwidth and a voltage-controlled oscillator （VCO） is designed with the aid of frequency ranges reuse technology. The circuit is implemented using 1st Silicon 0.25 μm mixed-signal complementary metal-oxide-semiconductor （CMOS） process. Simulation results show that the PLL clock frequency multiplier has very low phase noise and very short capture time .展开更多
文摘Low Voltage Differential Signaling (LVDS) has become a popular choice for high-speed serial links to conquer the bandwidth bottleneck of intra-chip data transmission. This paper presents the design and the implementation of LVDS Input/Output (I/O) interface circuits in a standard 0.18 μm CMOS technology using thick gate oxide devices (3.3 V), fully compatible with LVDS standard. In the proposed transmitter, a novel Common-Mode FeedBack (CMFB)circuit is utilized to keep the common-mode output voltage stable over Process, supply Voltage and Temperature (PVT) variations. Because there are no area greedy resistors in the CMFB circuitry, the disadvantage of large die area in existing transmitter structures is avoided. To obtain sufficient gain, the receiver consists of three am- plifying stages: a voltage amplifying stage, a transconductance amplifying stage, and a transimpedance amplifying stage. And to exclude inner nodes with high RC time constant, shunt-shunt negative feedback is introduced in the receiver. A novel active inductor shunt peaking structure is used in the receiver to fulfill the stringent requirements of high speed and wide Common-Mode Input Region (CMIR) without voltage gain, power dissipation and silicon area penalty. Simulation results show that data rates of 2 Gbps and 2.5 Gbps are achieved for the transmitter and receiver with power con- sumption of 13.2 mW and 8.3 mW respectively.
文摘A novel structure for a charge pump circuit is proposed, in which the charge-pump （CP） current can adaptively regulated according to phase-locked loops （PLL） frequency synthesis demand. The current follow technology is used to make perfect current matching characteristics, and the two differential inverters are implanted to increase the speed of charge pump and decrease output spur due to theory of low voltage difference signal. Simulation results, with 1st silicon 0. 25μm 2. 5 V complementary metal-oxide-semiconductor （CMOS） mixed-signal process, show the good current matching characteristics regardless of the charge pump output voltages.
基金Supported by the National Key Pre-Research Project of China (413010701-3)
文摘A 3.5 times PLL clock frequency multiplier for low voltage different signal （LVDS） driver is presented. A novel adaptive charge pump can automatically switch the loop bandwidth and a voltage-controlled oscillator （VCO） is designed with the aid of frequency ranges reuse technology. The circuit is implemented using 1st Silicon 0.25 μm mixed-signal complementary metal-oxide-semiconductor （CMOS） process. Simulation results show that the PLL clock frequency multiplier has very low phase noise and very short capture time .
