In this paper,size effects on optical performance of blue light-emitting diodes(LEDs)are investigated.The essential physical mechanism is studied by fabricating LEDs with various sizes of the active area and testing o...In this paper,size effects on optical performance of blue light-emitting diodes(LEDs)are investigated.The essential physical mechanism is studied by fabricating LEDs with various sizes of the active area and testing optical characteristics.It is found that micro-LEDs have better light extracting efficiency and thermal dissipation compared with broad-area LEDs,which is likely due to the small ratio of perimeter and active area.Furthermore,micro-LEDs are more beneficial for displays due to the stable wavelength under the low pulse width modulation(PWM)current density.展开更多
Through insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes （LEDs）, the strain in the epilayer was increased, the dislocation density was reduced. GaN-based LEDs with diffe...Through insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes （LEDs）, the strain in the epilayer was increased, the dislocation density was reduced. GaN-based LEDs with different Al compositions were compared. 6.8% Al composition in the stacks showed the highest electrostatic discharge （ESD） endurance ability at the human body mode up to 6000 V and the pass yield exceeded 95%.展开更多
基金supported by National Key Research and Development Program of China (No. 2017YFB0404800)
文摘In this paper,size effects on optical performance of blue light-emitting diodes(LEDs)are investigated.The essential physical mechanism is studied by fabricating LEDs with various sizes of the active area and testing optical characteristics.It is found that micro-LEDs have better light extracting efficiency and thermal dissipation compared with broad-area LEDs,which is likely due to the small ratio of perimeter and active area.Furthermore,micro-LEDs are more beneficial for displays due to the stable wavelength under the low pulse width modulation(PWM)current density.
基金supported by the National High Technology Research and Development Program of China(No.2008AA03A197)
文摘Through insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes （LEDs）, the strain in the epilayer was increased, the dislocation density was reduced. GaN-based LEDs with different Al compositions were compared. 6.8% Al composition in the stacks showed the highest electrostatic discharge （ESD） endurance ability at the human body mode up to 6000 V and the pass yield exceeded 95%.
