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Ultra-broad near-infrared emission of Bi-doped SiO_2 Al_2O_3 GeO_2 optical fibers
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作者 吴金东 陈丹平 +1 位作者 吴兴坤 邱建荣 《Chinese Optics Letters》 SCIE EI CAS CSCD 2011年第7期65-68,共4页
Bi-doped SiO2-Al2O3-GeO2 fiber preforms are prepared by modified chemical vapor deposition (MCVD) and solution doping process. The characteristic spectra of the preforms and fibers are experimentally investigated, a... Bi-doped SiO2-Al2O3-GeO2 fiber preforms are prepared by modified chemical vapor deposition (MCVD) and solution doping process. The characteristic spectra of the preforms and fibers are experimentally investigated, and a distinct difference in emission between the two is observed. Under 808-nm excitation, an ultra-broad near-infrared (NIR) emission with full-width at half-maximum (FWHM) of 495 nm is observed in the Bi-doped fiber. This observation, to our knowledge, is the first in this field. The NIR emission consists of two bands, which may be ascribed to the Bi0 and Bi+ species, respectively. This Bi-doDed fiber is promising for broadband or)tical amolification and widely tunable laser. 展开更多
关键词 Broadband amplifiers Chemical vapor deposition Fibers Germanium oxides Infrared devices LASERS Optical fibers Preforming Silicon compounds
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