To improve the internal quantum efficiency(IQE)and light output power of In Ga N light-emitting diodes(LEDs),we proposed an In-composition gradient increase and decrease In Ga N quantum barrier structure.Through analy...To improve the internal quantum efficiency(IQE)and light output power of In Ga N light-emitting diodes(LEDs),we proposed an In-composition gradient increase and decrease In Ga N quantum barrier structure.Through analysis of its P-I graph,carrier concentration,and energy band diagram,the results showed that when the current was 100 m A,the In-composition gradient decrease quantum barrier(QB)structure could effectively suppress electron leakage while improving hole injection efficiency,resulting in an increase in carrier concentration in the active region and an improvement in the effective recombination rate in the quantum well(QW).As a result,the IQE and output power of the LED were effectively improved.展开更多
基金supported by the National Natural Science Foundation of China(No.62174148)the National Key Research and Development Program(Nos.2022YFE0112000 and 2016YFE0118400)+2 种基金the Key Program for International Joint Research of Henan Province(No.231111520300)the Ningbo Major Project of‘Science,Technology and Innovation 2025’(No.2019B10129)the Zhengzhou 1125 Innovation Project(No.ZZ2018-45)。
文摘To improve the internal quantum efficiency(IQE)and light output power of In Ga N light-emitting diodes(LEDs),we proposed an In-composition gradient increase and decrease In Ga N quantum barrier structure.Through analysis of its P-I graph,carrier concentration,and energy band diagram,the results showed that when the current was 100 m A,the In-composition gradient decrease quantum barrier(QB)structure could effectively suppress electron leakage while improving hole injection efficiency,resulting in an increase in carrier concentration in the active region and an improvement in the effective recombination rate in the quantum well(QW).As a result,the IQE and output power of the LED were effectively improved.
