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A Morphological Study of Two Young Multipolar Planetary Nebulae
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作者 Shi-Bo Wen Chih-Hao Hsia +2 位作者 Xiao-Xi Kang Rui Chen Tao Luo 《Research in Astronomy and Astrophysics》 SCIE CAS CSCD 2023年第3期170-182,共13页
We carry out an optical morphological and infrared spectral study for two young planetary nebulae(PNs)Hen2-158 and Pe 1-1 to understand their complex shapes and dust properties.Hubble Space Telescope optical images re... We carry out an optical morphological and infrared spectral study for two young planetary nebulae(PNs)Hen2-158 and Pe 1-1 to understand their complex shapes and dust properties.Hubble Space Telescope optical images reveal that these nebulae have several bipolar-lobed structures and a faint arc with a clear boundary is located at the northwestern side of Pe 1-1.The presence of this arc-shaped structure suggests that the object interacts with its nearby interstellar medium.Spitzer IRS spectroscopic observations of these young nebulae clearly show prominent unidentified infrared emission features and a weak silicate band in Pe 1-1,indicating that Hen 2-158 is a carbonrich nebula and Pe 1-1 has a mixed chemistry dust environment.Furthermore,we construct two three-dimensional models for these PNs to realize their intrinsic structures.The simulated models of the nebulae suggest that multipolar nebulae may be more numerous than we thought.Our analyses of spectral energy distributions for Hen 2-158 and Pe 1-1 show that they have low luminosities and low stellar effective temperatures,suggesting that these nebulae are young PNs.A possible correlation between typical multipolar young PNs and nested nebulae is also discussed. 展开更多
关键词 NORTHWESTERN STELLAR PLANETARY
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Hydrogen Ion Implantation Induced Cutting Behavior Variation in Plunge Cutting of the Monocrystalline Silicon 被引量:1
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作者 Zejia Zhao E.V.Jelenkovic +2 位作者 Gaobo Xiao Zhuoxuan Zhuang Suet To 《Nanomanufacturing and Metrology》 2021年第4期209-215,共7页
In this study,surface modification of monocrystalline silicon with two doses of hydrogen ion implantation and the plunge cutting process were conducted to explore the influence of hydrogen ions on the cutting behavior... In this study,surface modification of monocrystalline silicon with two doses of hydrogen ion implantation and the plunge cutting process were conducted to explore the influence of hydrogen ions on the cutting behavior of silicon.The results show that ion implantation is capable of deteriorating or improving the machinability of silicon,depending on the implantation dose.More cleavages and a reduction of critical depth of cut(CDoC)were observed for the silicon with a low implantation dose in the cutting direction of<100>in comparison to bare silicon,while no cleavage and an increase of CDoC were achieved after implantation with a high dose in the same cutting direction.Besides,the ductile cutting and thrust forces of the silicon with the low dose are larger than the bare silicon,but the forces are significantly reduced for the silicon after the high dose of implantation.The variation of the cutting forces is due to the different required stresses to overcome ductile and fracture deformation of silicon. 展开更多
关键词 Hydrogen ion implantation Plunge cutting SILICON Critical depth of cut Cutting forces
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