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Electronic and optical properties of CdS/CdZnS nanocrystals
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作者 A.John Peter Chang Woo Lee 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第8期441-448,共8页
Cd1-xZnxS nanocrystals are prepared by a co-precipitation method with different atomic fractions of Zn. The texture, structural transformation and optical properties with increasing x value in Cd1-xZnxS are studied wi... Cd1-xZnxS nanocrystals are prepared by a co-precipitation method with different atomic fractions of Zn. The texture, structural transformation and optical properties with increasing x value in Cd1-xZnxS are studied with scanning electron microscopy, electron diffraction patterning, and absorption spectra respectively. Quantum confinement in a strained CdS/Cd1-xZnxS related nanodot with various Zn content values is investigated theoretically. Binding energies on exciton bound CdS/CdxZn1-xS quantum dot are computed, with consideration of the internal electric field induced by the spontaneous and piezoelectric polarizations, and thereby the interband emission energy is calculated as a function of the dot radius. The optical band gap from the UV absorption spectrum is compared with the interband emission energy computed theoretically. Our results show that the average diameter of composite nanoparticles ranges from 3 nm to 6 nm. The X-ray diffraction pattern shows that all the peaks shift towards the higher diffracting angles with an increase in Zn content. The lattice constant gradually decreases as the Zn content increases. The strong absorption edge shifts towards the lower wavelength region and hence the band gap of the films increases as the Zn content increases. The values of the absorption edge are found to shift towards the shorter wave length region and hence the direct band gap energy varies from 2.5 eV for the CdS film and 3.5 eV for the ZnS film. Our numerical results are in good agreement with the experimental results. 展开更多
关键词 quantum dots QUASICRYSTALS SEMICONDUCTOR
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