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比利时微电子研究中心IMEC的成功经验 被引量:6
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作者 高腾 《中国集成电路》 2003年第46期114-117,共4页
比利时微电子研究中心(IMEC)的全称为 Inter-university Micro-Electronic Center,即大学间微电子研究中心,其前身为比利时鲁汶大学微电子系。八十年代,西欧各国纷纷创立微电子研究中心,以发展本国微电子产业。1984年,从美国斯坦福大学... 比利时微电子研究中心(IMEC)的全称为 Inter-university Micro-Electronic Center,即大学间微电子研究中心,其前身为比利时鲁汶大学微电子系。八十年代,西欧各国纷纷创立微电子研究中心,以发展本国微电子产业。1984年,从美国斯坦福大学毕业的IMEC 展开更多
关键词 比利时 微电子研究中心 IMEC 政府支持 人力资源 国际性合作 知识产权 商业模式
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IMEC在面向SOC和嵌入式系统的系统级设计领域的研究工作 被引量:1
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作者 Eddy Blokken 高腾 《中国集成电路》 2004年第9期39-45,共7页
关键词 SOC 微电子工艺 系统级设计 嵌入式系统 研发中心 最大 国内 研究工作 比利时 欧洲
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迈向纳米级芯片技术的IMEC研发——先进封装技术部分
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作者 高腾 Philip Pieters 《电子工业专用设备》 2005年第5期29-32,共4页
关键词 芯片技术 纳米级 术部 封装 研发 设备制造商 半导体芯片 300mm 纳米时代 工艺发展 芯片制造 研究工作 制造工艺 栅极 并联 硅片
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用于无线通信的MEMS技术:IMEC的研究领域
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作者 高腾 《中国集成电路》 2002年第1期60-62,共3页
微电子机械系统(MEMS)技术,简称微系统,是基于较先进的IC制造技术来生成体积小,重量轻,性能高的元件或系统。用微系统技术来制造射频(RF)元件,包括开关,可变电容和滤波器,用于替代那些应用在无线前端的体积大,价格高的分离无源射频元件... 微电子机械系统(MEMS)技术,简称微系统,是基于较先进的IC制造技术来生成体积小,重量轻,性能高的元件或系统。用微系统技术来制造射频(RF)元件,包括开关,可变电容和滤波器,用于替代那些应用在无线前端的体积大,价格高的分离无源射频元件,这是全球通信领域正在努力的大方向。本文简要介绍在IMEC,一个位于比利时鲁汶的微电子研究中心,所进行的射频微系统研究发展工作。 展开更多
关键词 无线通信 微系统技术 射频开关 微电子机械系统 系统集成 滤波器 系统元件 可变电容 系统开关 多芯片封装
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Chalcogenide Ovonic Threshold Switching Selector
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作者 Zihao Zhao Sergiu Clima +4 位作者 Daniele Garbin Robin Degraeve Geoffrey Pourtois Zhitang Song Min Zhu 《Nano-Micro Letters》 SCIE EI CAS CSCD 2024年第5期1-40,共40页
Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or DRAM.Intel Optane,commonly referred to as three-dimen... Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or DRAM.Intel Optane,commonly referred to as three-dimensional phase change memory,stands out as one of the most promising candidates.The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch(OTS).The OTS device,which employs chalcogenide film,has thereby gathered increased attention in recent years.In this paper,we begin by providing a brief introduction to the discovery process of the OTS phenomenon.Subsequently,we summarize the key elec-trical parameters of OTS devices and delve into recent explorations of OTS materials,which are categorized as Se-based,Te-based,and S-based material systems.Furthermore,we discuss various models for the OTS switching mechanism,including field-induced nucleation model,as well as several carrier injection models.Additionally,we review the progress and innovations in OTS mechanism research.Finally,we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications,such as self-selecting memory and neuromorphic computing. 展开更多
关键词 Non-volatile memory Ovonic threshold switch(OTS) CHALCOGENIDE SELECTOR
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Low-loss chip-scale programmable silicon photonic processor 被引量:1
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作者 Yiwei Xie Shihan Hong +4 位作者 Hao Yan Changping Zhang Long Zhang Leimeng Zhuang Daoxin Dai 《Opto-Electronic Advances》 SCIE EI CAS CSCD 2023年第3期25-41,共17页
Chip-scale programmable optical signal processors are often used to flexibly manipulate the optical signals for satisfying the demands in various applications,such as lidar,radar,and artificial intelligence.Silicon ph... Chip-scale programmable optical signal processors are often used to flexibly manipulate the optical signals for satisfying the demands in various applications,such as lidar,radar,and artificial intelligence.Silicon photonics has unique advantages of ultra-high integration density as well as CMOS compatibility,and thus makes it possible to develop large-scale programmable optical signal processors.The challenge is the high silicon waveguides propagation losses and the high calibration complexity for all tuning elements due to the random phase errors.In this paper,we propose and demonstrate a programmable silicon photonic processor for the first time by introducing low-loss multimode photonic waveguide spirals and low-random-phase-error Mach-Zehnder switches.The present chip-scale programmable silicon photonic processor comprises a 1×4 variable power splitter based on cascaded Mach-Zehnder couplers(MZCs),four Ge/Si photodetectors,four channels of thermally-tunable optical delaylines.Each channel consists of a continuously-tuning phase shifter based on a waveguide spiral with a micro-heater and a digitally-tuning delayline realized with cascaded waveguide-spiral delaylines and MZSs for 5.68 ps time-delay step.Particularly,these waveguide spirals used here are designed to be as wide as 2μm,enabling an ultralow propagation loss of 0.28 dB/cm.Meanwhile,these MZCs and MZSs are designed with 2-μm-wide arm waveguides,and thus the random phase errors in the MZC/MZS arms are negligible,in which case the calibration for these MZSs/MZCs becomes easy and furthermore the power consumption for compensating the phase errors can be reduced greatly.Finally,this programmable silicon photonic processor is demonstrated successfully to verify a number of distinctively different functionalities,including tunable time-delay,microwave photonic beamforming,arbitrary optical signal filtering,and arbitrary waveform generation. 展开更多
关键词 silicon photonics PROGRAMMABLE photonic integrated circuit WAVEGUIDE delay lines Mach-Zehnder interferometer
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Synergistic interactions between the charge‐transport and mechanical properties of the ionic‐liquid‐based solid polymer electrolytes for solid‐state lithium batteries
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作者 Ashutosh Agrawal Saeed Yari +3 位作者 Hamid Hamed Tom Gouveia Rongying Lin Mohammadhosein Safari 《Carbon Energy》 SCIE EI CAS CSCD 2023年第11期44-53,共10页
The performance sensitivity of the solid‐state lithium cells to the synergistic interactions of the charge‐transport and mechanical properties of the electrolyte is well acknowledged in the literature,but the quanti... The performance sensitivity of the solid‐state lithium cells to the synergistic interactions of the charge‐transport and mechanical properties of the electrolyte is well acknowledged in the literature,but the quantitative insights therein are very limited.Here,the charge‐transport and mechanical properties of a polymerized ionic‐liquid‐based solid electrolyte are reported.The transference number and diffusion coefficient of lithium in the concentrated solid electrolyte are measured as a function of concentration and stack pressure.The elastoplastic behavior of the electrolyte is quantified under compression,within a home‐made setup,to substantiate the impact of stack pressure on the stability of the Li/electrolyte interface in the symmetric lithium cells.The results spotlight the interaction between the concentration and thickness of the solid electrolyte and the stack pressure in determining the polarization and stability of the solid‐state lithium batteries during extended cycling. 展开更多
关键词 BATTERY DIFFUSION pressure solid state TRANSFERENCE
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Morphological peculiarities of the lithium electrode from the perspective of the Marcus-Hush-Chidsey model
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作者 Behnam Ghalami Choobar Hamid Hamed Mohammadhosein Safari 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2023年第5期452-457,I0011,共7页
This study employs the kinetics framework of Marcus-Hush-Chidsey(MHC)to investigate the charge transfer at the interface of lithium electrode and electrolyte in lithium(ion)-batteries.The chargetransfer rate constant ... This study employs the kinetics framework of Marcus-Hush-Chidsey(MHC)to investigate the charge transfer at the interface of lithium electrode and electrolyte in lithium(ion)-batteries.The chargetransfer rate constant is evaluated for different facets of lithium,namely(100),(110),(101),and(111)as a function of surface charge density with the aid of density functional theory(DFT)calculations.The results highlight and quantify the sensitivity of the rate of lithium plating and stripping to the surface orientation,surface charge density,and charge-transfer over-potential.An intrinsic kinetics competition among the different surface orientations is identified together with an asymmetry between the lithium plating and stripping and showcased to influence the deposit morphology and surface protrusions and indentations. 展开更多
关键词 Marcus-Hush-Chidsey kinetics Surface orientation Surface charge Lithium electrode
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Bridging the microstructural evolutions from slurry to porous electrode of a lithium-ion battery
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作者 Hamid Hamed Zoleikha Mirzaie Alamooti +3 位作者 Ashutosh Agrawal Jan D'Haen An Hardy Mohammadhosein Safari 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2023年第9期329-334,共6页
1. Introduction The porous electrodes are the crucial components of the modern electrochemical devices including lithium-ion batteries. The detailed configuration of the lithium-insertion, carbon black, and PVDF binde... 1. Introduction The porous electrodes are the crucial components of the modern electrochemical devices including lithium-ion batteries. The detailed configuration of the lithium-insertion, carbon black, and PVDF binder particles in a typical electrode of a lithium-ion cell has a significant impact on its energy and power density. A thinner electrode is desired to decrease the battery volume particularly for portable electronics and mobility applications. 展开更多
关键词 density. LITHIUM ELECTRODE
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Optic nerve injury-induced regeneration in the adult zebrafish is accompanied by spatiotemporal changes in mitochondrial dynamics
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作者 An Beckers Luca Masin +7 位作者 Annelies Van Dyck Steven Bergmans Sophie Vanhunsel Anyi Zhang Tine Verreet Fabienne EPoulain Karl Farrow Lieve Moons 《Neural Regeneration Research》 SCIE CAS CSCD 2023年第1期219-225,共7页
Axonal regeneration in the central nervous system is an energy-intensive process.In contrast to mammals,adult zebrafish can functionally recover from neuronal injury.This raises the question of how zebrafish can cope ... Axonal regeneration in the central nervous system is an energy-intensive process.In contrast to mammals,adult zebrafish can functionally recover from neuronal injury.This raises the question of how zebrafish can cope with this high energy demand.We previously showed that in adult zebrafish,subjected to an optic nerve crush,an antagonistic axon-dendrite interplay exists wherein the retraction of retinal ganglion cell dendrites is a prerequisite for effective axonal repair.We postulate a‘dendrites for regeneration’paradigm that might be linked to intraneuronal mitochondrial reshuffling,as ganglion cells likely have insufficient resources to maintain dendrites and restore axons simultaneously.Here,we characterized both mitochondrial distribution and mitochondrial dynamics within the different ganglion cell compartments(dendrites,somas,and axons)during the regenerative process.Optic nerve crush resulted in a reduction of mitochondria in the dendrites during dendritic retraction,whereafter enlarged mitochondria appeared in the optic nerve/tract during axonal regrowth.Upon dendritic regrowth in the retina,mitochondrial density inside the retinal dendrites returned to baseline levels.Moreover,a transient increase in mitochondrial fission and biogenesis was observed in retinal ganglion cell somas after optic nerve damage.Taken together,these findings suggest that during optic nerve injury-induced regeneration,mitochondria shift from the dendrites to the axons and back again and that temporary changes in mitochondrial dynamics support axonal and dendritic regrowth after optic nerve crush. 展开更多
关键词 axonal regeneration central nervous system dendrite remodeling energy metabolism FISSION mitochondria mitochondrial trafficking optic nerve crush retina zebrafish
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Cu导线表面起伏程度对早期失效的影响 被引量:2
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作者 汪辉 朱建军 +2 位作者 王国宏 C Bruynseraede KMaex 《电子学报》 EI CAS CSCD 北大核心 2005年第8期1516-1518,共3页
使用两种化学机械抛光剂得到的单层大马士革Cu导线表面起伏程度不同.扫描电镜观察到明显的缺陷出现在大起伏的Cu导线表面.这种表面缺陷导致早期失效比率剧增至几乎100%、电迁移寿命猛降至早期失效的量级、失效时间分布从多模变为单模,... 使用两种化学机械抛光剂得到的单层大马士革Cu导线表面起伏程度不同.扫描电镜观察到明显的缺陷出现在大起伏的Cu导线表面.这种表面缺陷导致早期失效比率剧增至几乎100%、电迁移寿命猛降至早期失效的量级、失效时间分布从多模变为单模,其相应的失效机制激活能为0.74±0.02eV,这说明失效主要是由Cu原子沿导线表面扩散引起的.最弱链接近似被用来分析单根Cu导线:Cu导线被适当均分为若干相互串联、失效机制不同的Cu块,任何一个Cu块的失效都会使整根Cu导线失效.分析结果表明,虽然表面缺陷不是最快的失效机制,但大起伏Cu导线的表面缺陷密度是另一种的10倍以上,这是其早期失效比率高和可靠性较低的主要原因. 展开更多
关键词 电迁移 早期失效 表面缺陷 最弱链接近似
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Cu导线表面起伏度对其早期失效的影响(英文)
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作者 汪辉 朱建军 +2 位作者 王国宏 Bruynseraed C Maex K 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第12期2330-2334,共5页
不同化学机械抛光剂使单层大马士革Cu导线表面起伏程度不同.扫描电镜观察到明显的缺陷出现在大起伏的Cu导线表面.这种表面缺陷导致早期失效比率剧增至几乎100%,电迁移寿命猛降至早期失效的量级,失效时间分布从多模变为单模.其相应的失... 不同化学机械抛光剂使单层大马士革Cu导线表面起伏程度不同.扫描电镜观察到明显的缺陷出现在大起伏的Cu导线表面.这种表面缺陷导致早期失效比率剧增至几乎100%,电迁移寿命猛降至早期失效的量级,失效时间分布从多模变为单模.其相应的失效机制激活能为0.74±0.02eV,说明失效主要是由Cu原子沿导线表面扩散引起的.最弱链接近似被用来分析单根Cu导线:Cu导线被适当均分为若干相互串联、失效机制不同的Cu块,任何一个Cu块的失效都会使整根Cu导线失效.分析结果表明,虽然表面缺陷不是最快的失效机制,但大起伏Cu导线的表面缺陷密度是另一种的10倍以上,这是其早期失效比率高和可靠性较低的主要原因. 展开更多
关键词 早期失效 表面缺陷 最弱链接近似
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硅的钴溅射引进深能级的研究
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作者 卢励吾 G.Groeseneken K.Maex 《电子学报》 EI CAS CSCD 北大核心 1991年第1期113-116,共4页
利用DLTS技术详细研究了经钴溅射并在不同温度下的RTA在n型和p型硅里引进的深能级。结果表明在n型硅里有五个深能级生成,这些能级的浓度较低,分布在2×10^(10)—1×10^(11)cm^(-3)范围内。它们可归因于替位的钴原子,钴与RTA的... 利用DLTS技术详细研究了经钴溅射并在不同温度下的RTA在n型和p型硅里引进的深能级。结果表明在n型硅里有五个深能级生成,这些能级的浓度较低,分布在2×10^(10)—1×10^(11)cm^(-3)范围内。它们可归因于替位的钴原子,钴与RTA的互作用或钴与缺陷的络合物。 展开更多
关键词 钴溅射 深能级 N型硅 p型硅
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Prospective real-time evaluation of diagnostic performance using endocytoscopy in differentiating neoplasia from nonneoplasia for colorectal diminutive polyps(≤ 5 mm) 被引量:4
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作者 Takahiro Utsumi Yasushi Sano +8 位作者 Mineo Iwatate Hironori Sunakawa Akira Teramoto Daizen Hirata Santa Hattori Wataru Sano Noriaki Hasuike Kazuhito Ichikawa Takahiro Fujimori 《World Journal of Gastrointestinal Oncology》 SCIE CAS 2018年第4期96-102,共7页
AIM To clarify the diagnostic performance of endocytoscopy for differentiation between neoplastic and nonneoplastic colorectal diminutive polyps.METHODS Patients who underwent endocytoscopy between October and Decembe... AIM To clarify the diagnostic performance of endocytoscopy for differentiation between neoplastic and nonneoplastic colorectal diminutive polyps.METHODS Patients who underwent endocytoscopy between October and December 2016 at Sano Hospital were prospectively recruited. When diminutive polyps(≤5 mm) were detected, the lesions were evaluated by endocytoscopy after being stained with 0.05% crystal violet and 1% methylene blue. The diminutivepolyps were classified into five categories(EC 1 a, 1 b, 2, 3 a, and 3 b). Endoscopists were asked to take a biopsy from any lesion diagnosed as EC1 b(indicator of hyperplastic polyp) or EC2(indicator of adenoma). We have assessed the diagnostic performance of endocytoscopy for EC2 and EC1 b lesions by comparison with the histopathology of the biopsy specimen. RESULTS A total of 39 patients with 63 diminutive polyps were analyzed. All polyps were evaluated by endocytoscopy. The mean polyp size was 3.3 ± 0.9 mm. Among the 63 diminutive polyps, 60 were flat and 3 were pedunculated. The mean time required for EC observation, including the time for staining with crystal violet and methylene blue, was 3.0 ± 1.9 min. Histopathologic evaluation showed that 13 polyps were hyperplastic and 50 were adenomas. The sensitivity, specificity, accuracy, positive predictive value, and negative predictive value of EC2 for adenoma compared with EC1 b for hyperplastic polyp were 98.0%, 92.3%, 96.8%, 98.0% and 92.3%, respectively. There were only two cases of disagreement between the endoscopic diagnosis made by endocytoscopy and the corresponding histopathological diagnosis.CONCLUSION Endocytoscopy showed a high diagnostic performance for differentiating between neoplastic and non-neoplastic colorectal diminutive polyps, and therefore has the potential to be used for "real-time histopathology". 展开更多
关键词 ENDOCYTOSCOPY Diagnostic performance DIMINUTIVE POLYP Endocytoscopic classification Realtime histopathology
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Ni-Au/AlN/Si器件的深能级瞬态谱研究
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作者 王冲 赵明 +1 位作者 Eddy SIMOEN 李伟 《半导体光电》 CAS 北大核心 2019年第4期494-498,共5页
对GaN器件制备过程中AlN缓冲层相关的电活性缺陷进行了C-V和深能级瞬态谱(DLTS)研究。C-V研究结果表明,制备态Ni-Au/AlN/Si MIS器件中,靠近AlN/Si界面处的掺杂浓度为4.4×1017 cm-3,明显高于Si衬底的1.4×1016 cm-3,意味着制备... 对GaN器件制备过程中AlN缓冲层相关的电活性缺陷进行了C-V和深能级瞬态谱(DLTS)研究。C-V研究结果表明,制备态Ni-Au/AlN/Si MIS器件中,靠近AlN/Si界面处的掺杂浓度为4.4×1017 cm-3,明显高于Si衬底的1.4×1016 cm-3,意味着制备态样品中Al原子已经向衬底硅中扩散。采用退火工艺研究了GaN器件制备过程中的热影响以及热处理前后电活性缺陷在硅衬底中的演变情况,发现退火处理后,Al原子进一步向衬底硅中更深处扩散,扩散深度由制备态的500nm左右深入到1μm附近。DLTS研究结果发现,在Si衬底中与Al原子扩散相关的缺陷为Al-O配合物点缺陷。DLTS脉冲时间扫描表明,相比于制备态样品,退火态样品中出现了部分空穴俘获时间常数更大的缺陷,退火处理造成了点缺陷聚集,缺陷类型由点缺陷逐渐向扩展态缺陷发展。 展开更多
关键词 AlN/Si界面 C-V 深能级瞬态谱 点缺陷 扩展态缺陷
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Integration of GaN analog building blocks on p-GaN wafers for GaN ICs 被引量:1
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作者 Xiangdong Li Karen Geens +6 位作者 Nooshin Amirifar Ming Zhao Shuzhen You Niels Posthuma Hu Liang Guido Groeseneken Stefaan Decoutere 《Journal of Semiconductors》 EI CAS CSCD 2021年第2期113-116,共4页
We demonstrate the key module of comparators in GaN ICs,based on resistor-transistor logic(RTL)on E-mode wafers in this work.The fundamental inverters in the comparator consist of a p-GaN gate HEMT and a 2DEG resistor... We demonstrate the key module of comparators in GaN ICs,based on resistor-transistor logic(RTL)on E-mode wafers in this work.The fundamental inverters in the comparator consist of a p-GaN gate HEMT and a 2DEG resistor as the load.The function of the RTL comparators is finally verified by a undervoltage lockout(UVLO)circuit.The compatibility of this circuit with the current p-GaN technology paves the way for integrating logic ICs together with the power devices. 展开更多
关键词 P-GAN resistor-transistor logic(RTL) comparator undervoltage lockout(UVLO) GaN ICs
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Ultralow-power polymer electro–optic integrated modulators 被引量:1
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作者 Amirmahdi Honardoost Reza Safian +1 位作者 Min Teng Leimeng Zhuang 《Journal of Semiconductors》 EI CAS CSCD 2019年第7期7-8,共2页
On-chip integration of electronics and photonics have attracted substantial amount of interest in recent decades. Major obstacles to the realization of this integration are size mismatch between electronic and photoni... On-chip integration of electronics and photonics have attracted substantial amount of interest in recent decades. Major obstacles to the realization of this integration are size mismatch between electronic and photonic circuits, as well as issues with ever-increasing requirements for energy efficiency, bandwidth, optical loss, and drive voltage. Another important issue is the absence of photonic materials that make such integration commercially possible in foundry-compatible processes. Future integration involves combination of various materials and platforms. During the last decade there has been an increasing interest in exploiting various photonic platforms to overcome these obstacles. Integration of silicon photonics[1–3] with technologies such as plasmonics[4–6], photonic crystal architectures[7], and hybrid materials[8] have been widely pursued for photonic integration. 展开更多
关键词 optical HAS
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面向45纳米制造工艺的技术研究 被引量:5
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作者 高腾 《集成电路应用》 2003年第7期49-51,共3页
随着130纳米技术成为集成电路制造工业的主流技术,以及90纳米技术的逐渐成熟,欧洲微电子领域最大的独立研究中心TMEC,已将其研究重心转移到更小尺寸的工艺技术。其中,面向45纳米及更小尺寸的工艺研究项目包括:(1)157纳米深紫外线(DUV)... 随着130纳米技术成为集成电路制造工业的主流技术,以及90纳米技术的逐渐成熟,欧洲微电子领域最大的独立研究中心TMEC,已将其研究重心转移到更小尺寸的工艺技术。其中,面向45纳米及更小尺寸的工艺研究项目包括:(1)157纳米深紫外线(DUV)和极深紫外线(EUV)光刻;(2)用于平面缩小器件(Scaled Planar Device)的高迁移率膜的应用和先进的源/漏极工程方案;(3)用于平面缩小器件(Scaled Planar Device) 展开更多
关键词 集成电路 45纳米制造工艺 157纳米深紫外线光刻 极深紫外线光刻 高迁移率膜 金属栅极 CMOS器件 互连 清洗 杂质控制
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提高薄膜太阳能电池的效率 被引量:3
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作者 Izabela Kuzma Guy Beaucarne Jef Poortmans 《集成电路应用》 2008年第9期32-33,共2页
降低硅太阳能电池成本的方法之一是尽量减少高质量硅材料的使用量,如薄膜太阳能电池。不过这种太阳能电池的效率只达到了约11-12%。研究人员们正在寻求提升其效率的方法。
关键词 薄膜太阳能电池 硅太阳能电池 研究人员 使用量 硅材料
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用硬开关VIENNA Boost转换器描述AlGaN/GaN/AlGaN功率双异质结场效应晶体管
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作者 Jordi Everts Pieter Jacqmaer +6 位作者 Ratmir Gelagaev Johan Driesen Jeroen Van den Keybus Jo Das Marianne Germain 田琦 袁立强 《电力电子》 2011年第1期35-39,共5页
一种高频、硬开关boost转换器(VIENNA拓扑)被用来描述新型AlGaN/GaN/A1GaN功率双异质结场效应晶体管(DHEFTs)在运行状态下的特性。这种变换器可以让我们精确地测量出功率电路设计中最重要的器件参数(动态开通电阻R_(dyn),门极漏极电荷Q_... 一种高频、硬开关boost转换器(VIENNA拓扑)被用来描述新型AlGaN/GaN/A1GaN功率双异质结场效应晶体管(DHEFTs)在运行状态下的特性。这种变换器可以让我们精确地测量出功率电路设计中最重要的器件参数(动态开通电阻R_(dyn),门极漏极电荷Q_(gd),密勒电荷Q_(gd),开通电压V_(th),开关时间t_(on)和t_(off),质品因数FOM……)。通过采用正确的测量手段和自行开发的精确度/分辨率改进电路可以实现高度准确性。在A1GaN/GaN/AIGaN DHEFTs样品上进行的动态开通电阻和门极电荷的测量得到了很好的结果。 展开更多
关键词 硬开关 转换器 场效应晶体管
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