Effect of displacement on resistance and capacitance of polyaniline film

This paper investigates the properties of displacement sensors based on polyaniline （PANI） films. About 1 wt% of PANI micropowder is mixed and stirred in a solution of 90 wt% water and 10 wt% alcohol at room temperature. The films of PANI axe deposited from solution by drop-casting on Ag electrodes, which are preliminary deposited on glass substrates. The thicknesses of the PANI films are in the range of 20 μm-80 μm. A displacement sensor with polyaniline film as an active material is designed and fabricated. The investigations showed that, on average, the AC resistance of the sensor decreases by 2 times and the capacitance accordingly increases by 1.6 times as the displacement changes in the range of 0 mm-0.5 mm. The polyaniline is the only active material of the displacement sensor. The resistance and capacitance of the PANI changes under the pressure of spring and elastic rubber, and this pressure is created by the downward movement of the micrometer.

Electrical Characteristics of A1/CNT/NiPc/PEPC/Ag Surface-Type Cell

The blend of nickel phthalocyanine （NiPc） （2 wt. %） poly-N-epoxypropylcarbazole （PEPC）, （1 wt. %） and carbon nano-tube （CNT） powder （2 wt. %） in benzole is deposited by drop-casting on glass substrates with pre-deposited metallic electrodes to fabricate Ag/CNT/NiPc/PEPC/A1 surface type cell. It is assumed that the high nonlinearity of the I — V characteristics is related to deep traps in the nano-scale depletion region in NiPc that is observed experimentally. The values of ideality factor and barrier height are determined from the I — V curve and they are found to be 8.4 and 1.05eV, respectively. The values of mobility and conductivity are calculated to be 7.94 × 10？8 cm/Vs and 3.5 × 10？6 Ω？1 cm？1. The values of ideality factor and series resistance are also calculated by using Cheung＇s functions, which are in good agreement with the values calculated from the I — V curve.

Electrical characterization of the organic semiconductor Ag/CuPc/Au Schottky diode

This paper reports on the fabrication and investigation of a surface-type organic semiconductor copper phthalocyanine（CuPc） based diode.A thin film of CuPc of thickness 100 nm was thermally sublimed onto a glass substrate with preliminary deposited metallic electrodes to form a surface-type Ag/CuPc/Au Schottky diode.The current-voltage characteristics were measured at room temperature under dark conditions.The barrier height was calculated as 1.05 eV.The values of mobility and conductivity was found to be 1.74×10;cm;/（V·s） and 5.5×10;Ω;·cm;,respectively.At low voltages the device showed ohmic conduction and the space charge limited current conduction mechanisms were dominated at higher voltages.

Low temperature properties of organicinorganic Ag/p-CuPc/n-GaAs/Ag photoelectric sensor

A thin organic film of p-type semiconducting copper phthalocynanine (CuPc) was deposited by vacuum evaporation on an n-type GaAs single-crystal semiconductor substrate. The fabricated Ag/p-CuPc/n-GaAs/Ag sensor was carried through an ageing process to stabilize the parameters. Voltage-current characteristics and photoelectrical response of the sensor were investigated at a wide temperature range of 82 to 350 K. Photoelectric characteristics were measured under non-modulated filament-lamp illumination. It was observed that such sensor parameters as rectification ratio,threshold voltage,junction,shunt and series resistances,open-circuit voltage and short circuit current are temperature-dependent. It was found that wide-range voltage-current characteristics of the sensor may be de-scribed similarly to that of a Schottky barrier diode. Using the experimental data on voltage-current characteristics and absorbance of the CuPc films,the energy-band diagram of the p-CuPc/n-GaAs heterojunction was developed. It was shown that data obtained from simulation of an equivalent circuit of photoelectric sensor agreed with experimental results.

Carbon nanotube cuprous oxide composite based pressure sensors

In this paper, we present the design, the fabrication, and the experimental results of carbon nanotube （CNT） and Cu20 composite based pressure sensors. The pressed tablets of the CNT Cu20 composite are fabricated at a pressure of 353 MPa. The diameters of the multiwalled nanotubes （MWNTs） are between 10 nm and 30 nm. The sizes of the Cu20 micro particles are in the range of 3-4 μm. The average diameter and the average thickness of the pressed tablets are 10 mm and 4.0 mm, respectively. In order to make low resistance electric contacts, the two sides of the pressed tablet are covered by silver pastes. The direct current resistance of the pressure sensor decreases by 3.3 times as the pressure increases up to 37 kN/m^2. The simulation result of the resistance-pressure relationship is in good agreement with the experimental result within a variation of ±2%.

Novel pressure and displacement sensors based on carbon nanotubes

We report newly designed pressure and displacement capacitive sensors based on a flexible paper–CNT structure.The carbon nanotube（CNT） powder was deposited on a thin paper substrate and was pressed at an elevated temperature.The sheet resistance of the paper–CNT films was in the range of 2–4 kΩ/cm^2. The paper–CNT films were used to fabricate pressure and displacement sensors. The sensitivities of the pressure and the displacement sensors were found to be17.3 p F·m^2/k N and 0.93 10-3p F/μm, respectively. The experimental results were compared with the simulated data and they found good agreement with each other.

Photoconductive properties of organic-inorganic Ag/p-CuPc/n-GaAs/Ag cell

A thin film of copper phthalocyanine（CuPc）,a p-type semiconductor,was deposited by thermal evaporation in vacuum on an n-type gallium arsenide（GaAs） single-crystal semiconductor substrate.Then semitransparent Ag thin film was deposited onto the CuPc film also by thermal evaporation to fabricate the Ag/p-CuPc /n-GaAs/Ag cell.Photoconduction of the cell was measured in photoresistive and photodiode modes of operation. It was observed that with an increase in illumination,the photoresistance decreased in reverse bias while it increased in forward bias.The photocurrent was increased in reverse bias operation.In forward bias operation with an increase in illumination,the photocurrent showed a different behavior depending on the voltage applied.

Synthesis of metal oxide composite nanosheets and their pressure sensing properties

This study presents the synthesis of metal oxides composite nanosheets （oxides of cobalt, zinc and iron） and their pressure sensing properties. A transducer has been fabricated to directly measure the resistance- pressure and impedance-pressure relationships of pristine nanopowder. At the initial stage, a nanopowder sample of 10 mm diameter and 1 mm height was placed in the transducer and by applying pressure of up to 8.15 kN/m^2; the DC resistance and the impedance are reduced by 44% on average. It can be explained by the densification of the samples and a decrease in porosity due to the effect of pressure. It was also observed that the DC resistance increases with time and saturated within 8 min. It is considered that this phenomenon is based on the effect of displacement currents of bound charges. The dependences of the impedance phase （8） on frequency and pressure have also been investigated.

Optical transmission in thin films of vanadium compounds

Thin films of five vanadium compounds/composite： （1） VO2（3-fl） （3-fl = 3-Hydroxyflavone）, （2） VO（pbd）： （pbd = 1-Phenyl-l, 3-butadione）, （3） VO（dbm）2 （dbm = Dibenzoylmethane）, （4） VPc （Vanadyl Phthalocyanine） and （5） V2O5-PEPC （V2O5- poly-N-epoxypropylcarbazole composite）, were deposited by the dropcasting method from the solution in benzene. The transmittance-irradiance relationships were investigated and the transmission in the visible spectrum and optical images were obtained as well. It was found that the transmittance of the VO2（3-fl）, VO（pbd）2, VO（dbm）2 and VPc, was practically independent of the irradiance; whereas the transmittance of V2O5-PEPC decreased by 4% for thin and 9% for thick films with an increase of the irradiance.

Humidity sensing properties of CU_2O-PEPC nanocomposite films

A blend of copper oxide nanopowder （Cu2O）, 3 wt.%, and poly-N-epoxypropylcarbazole （PEPC）, 2 wt.%, in benzol was drop-casted on glass substrates with pre-deposited surface-type silver electrodes for the fabrication of Cu20-PEPC nanocomposite thin films. The thicknesses of the Cu20-PEPC films were in the range of 10-13 μm. The effect of humidity on the electrical properties of the nanocomposite films was investigated by measuring the capacitance and dissipation of the samples at two different frequencies of the applied voltage： 120 Hz and 1 kHz. The AC resistance of the samples was determined from the dissipation values, and the DC resistance was measured directly. The effect of ageing on the humidity sensing properties of the nanocomposite was observed. After ageing, it was observed that at 120 Hz and 1 kHz, under a humidity of up to 86% RH, the capacitance of the cell increased by 85 and 8 times, and the resistance decreased by 345 and 157 times, accordingly, with respect to 30% RH conditions. It was found that with an increase in frequency, the capacitance and resistance of the samples decreased. It is assumed that the humidity response of the cell is associated with the diffusion of water vapors and doping of the semiconductor nanocomposite by water molecules.

Resistive humidity sensor based on vanadium complex films

A resistive-type relative humidity （RH） sensor based on vanadium complex （VO2（3-f[）） film is reported in this study. Gold electrodes were deposited on the glass substrates in a co-planar structure. A thin film of vanadium complex was coated as a humidity-sensing material on the top of the pre-patterned electrodes. The humidity-sensing principle of the sensor was based on the conductivity change of coated sensing element upon adsorption/desorption of water vapor. The resistance of the humidity sensor measured at 1 kHz decreased linearly with increasing the humidity in the range of 35%-70% RH. The overall resistance of the sensor decreases 11 times. An equivalent circuit for the VO2（3-fl） based resistive-type humidity sensor was developed. The properties of the sensor studied in this work make it beneficial for use in the instruments for environmental monitoring of humidity.

CuPc/C_(60) heterojunction thin film optoelectronic devices

The optoelectronic properties of heterojunction thin film devices with ITO/CuPc/C_（60）/Al structure have been investigated by analyzing their current-voltage characteristics,optical absorption and photocurrent.In this organic photovoltaic device,CuPc acts as an optically active layer,C_（60） as an electron-transporting layer and ITO and Al as electrodes.It is observed that,under illumination,excitons are formed,which subsequently drift towards the interface with C_（60）,where an internal electric field is present.The excitons that reach the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface.The experimental results show that in this device the total current density is a function of injected carriers at the electrode-organic semiconductor surface,the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons.

Ag/PEPC/NiPc/ZnO/Ag thin film capacitive and resistive humidity sensors

A thin film of blended poly-N-epoxypropylcarbazole（PEPC）（25 wt.%）,nickel phthalocyanine（NiPc）（50 wt.%） and ZnO nano-powder（25 wt.%） in benzene（5 wt.%） was spin-coated on a glass substrate with silver electrodes to produce a surface-type Ag/PEPC/NiPc/ZnO/Ag capacitive and resistive sensor.Sensors with two different PEPC/NiPc/ZnO film thicknesses（330 and 400 nm） were fabricated and compared.The effects of humidity on capacitance and resistance of the Ag/PEPC/NiPc/ZnO/Ag sensors were investigated at two frequencies of the applied voltage：120 Hz and 1 kHz.It was observed that at 120 Hz under humidity of up to 95%RH the capacitance of the sensors increased by 540 times and resistance decreased by 450 times with respect to humidity conditions of 50%RH. It was found that the sensor with a thinner semiconducting film（330 nm） was more sensitive than the sensor with a thicker film（400 nm）.The sensitivity was improved when the sensor was used at a lower frequency as compared with a high frequency.It is assumed that the humidity response of the sensors is associated with absorption of water vapors and doping of water molecules in the semiconductor blend layer.This had been proven by simulation of the capacitance-humidity relationship.

Humidity sensitive organic field effect transistor

This paper reports the experimental results for the humidity dependent properties of an organic field effect transistor.The organic field effect transistor was fabricated on thoroughly cleaned glass substrate,in which the junction between the metal gate and the organic channel plays the role of gate dielectric.Thin films of organic semiconductor copper phthalocynanine（CuPc） and semitransparent Al were deposited in sequence by vacuum thermal evaporation on the glass substrate with preliminarily deposited Ag source and drain electrodes.The output and transfer characteristics of the fabricated device were performed.The effect of humidity on the drain current,drain current-drain voltage relationship, and threshold voltage was investigated.It was observed that humidity has a strong effect on the characteristics of the organic field effect transistor.